Gain characteristics of GaN quantum wells including many body effects

P. Rees; C. Cooper; P. Blood; P. M. Smowton; J. Hegarty

doi:10.1049/el:19950826

Gain characteristics of GaN quantum wells including many body effects

P. Rees, C. Cooper, P. Blood, P. M. Smowton, J. Hegarty

Houston Methodist

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The authors have calculated the gain-current characteristics for a 70 angstrom GaN-Al_0.14Ga_0.86N quantum well and show that the inclusion of Coulomb enhancement increases the current at a given gain by approx.50%, and has an effect on the predicted laser wavelength.

Original language	English (US)
Pages (from-to)	1149-1150
Number of pages	2
Journal	Electronics Letters
Volume	31
Issue number	14
DOIs	https://doi.org/10.1049/el:19950826
State	Published - Jul 6 1995

Keywords

Gallium nitride
Semiconductor junction lasers
Semiconductor quantum wells

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19950826

Cite this

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title = "Gain characteristics of GaN quantum wells including many body effects",

abstract = "The authors have calculated the gain-current characteristics for a 70 angstrom GaN-Al0.14Ga0.86N quantum well and show that the inclusion of Coulomb enhancement increases the current at a given gain by approx.50%, and has an effect on the predicted laser wavelength.",

keywords = "Gallium nitride, Semiconductor junction lasers, Semiconductor quantum wells",

author = "P. Rees and C. Cooper and P. Blood and Smowton, {P. M.} and J. Hegarty",

year = "1995",

month = jul,

day = "6",

doi = "10.1049/el:19950826",

language = "English (US)",

volume = "31",

pages = "1149--1150",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "14",

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TY - JOUR

T1 - Gain characteristics of GaN quantum wells including many body effects

AU - Rees, P.

AU - Cooper, C.

AU - Blood, P.

AU - Smowton, P. M.

AU - Hegarty, J.

PY - 1995/7/6

Y1 - 1995/7/6

N2 - The authors have calculated the gain-current characteristics for a 70 angstrom GaN-Al0.14Ga0.86N quantum well and show that the inclusion of Coulomb enhancement increases the current at a given gain by approx.50%, and has an effect on the predicted laser wavelength.

AB - The authors have calculated the gain-current characteristics for a 70 angstrom GaN-Al0.14Ga0.86N quantum well and show that the inclusion of Coulomb enhancement increases the current at a given gain by approx.50%, and has an effect on the predicted laser wavelength.

KW - Gallium nitride

KW - Semiconductor junction lasers

KW - Semiconductor quantum wells

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U2 - 10.1049/el:19950826

DO - 10.1049/el:19950826

M3 - Article

AN - SCOPUS:0029637896

SN - 0013-5194

VL - 31

SP - 1149

EP - 1150

JO - Electronics Letters

JF - Electronics Letters

IS - 14

ER -

Gain characteristics of GaN quantum wells including many body effects

Abstract

Keywords

ASJC Scopus subject areas

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