Gain characteristics of GaN quantum wells including many body effects

P. Rees, C. Cooper, P. Blood, P. M. Smowton, J. Hegarty

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

The authors have calculated the gain-current characteristics for a 70 angstrom GaN-Al0.14Ga0.86N quantum well and show that the inclusion of Coulomb enhancement increases the current at a given gain by approx.50%, and has an effect on the predicted laser wavelength.

Original languageEnglish (US)
Pages (from-to)1149-1150
Number of pages2
JournalElectronics Letters
Volume31
Issue number14
DOIs
StatePublished - Jul 6 1995

Keywords

  • Gallium nitride
  • Semiconductor junction lasers
  • Semiconductor quantum wells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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