Gain calculations for unipolar semiconductor lasers

C. Y.L. Cheung; Paul Rees; K. A. Shore

doi:10.1049/ip-opt:19990452

Gain calculations for unipolar semiconductor lasers

C. Y.L. Cheung, Paul Rees, K. A. Shore

Houston Methodist

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The optical gain spectra of a single triple quantum well (TQW) mid-infrared (MIR) laser element suitable for incorporation in a quantum cascade configuration are investigated. The kinetics of the carrier transport in the TQW structure are provided using a four-level rate equation model. The low gain per element at MIR frequencies illustrates the need for several such elements. Preliminary gain calculations for a near-infrared (NIR) structure are also performed.

Original language	English (US)
Pages (from-to)	9-13
Number of pages	5
Journal	IEE Proceedings: Optoelectronics
Volume	146
Issue number	1
DOIs	https://doi.org/10.1049/ip-opt:19990452
State	Published - Jan 1 1999

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Computer Networks and Communications
Electrical and Electronic Engineering

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10.1049/ip-opt:19990452

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AB - The optical gain spectra of a single triple quantum well (TQW) mid-infrared (MIR) laser element suitable for incorporation in a quantum cascade configuration are investigated. The kinetics of the carrier transport in the TQW structure are provided using a four-level rate equation model. The low gain per element at MIR frequencies illustrates the need for several such elements. Preliminary gain calculations for a near-infrared (NIR) structure are also performed.

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Gain calculations for unipolar semiconductor lasers

Abstract

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