Free-standing epitaxial graphene

Shriram Shivaraman; Robert A. Barton; Xun Yu; Jonathan Alden; Lihong Herman; M. S.V. Chandrashekhar; Jiwoong Park; Paul L. McEuen; Jeevak M. Parpia; Harold G. Craighead; Michael G. Spencer

doi:10.1021/nl900479g

Free-standing epitaxial graphene

Shriram Shivaraman, Robert A. Barton, Xun Yu, Jonathan Alden, Lihong Herman, M. S.V. Chandrashekhar, Jiwoong Park, Paul L. McEuen, Jeevak M. Parpia, Harold G. Craighead, Michael G. Spencer

Houston Methodist

Research output: Contribution to journal › Article › peer-review

203 Scopus citations

Abstract

We report on a method to produce free-standing graphene sheets from epitaxial graphene on silicon carbide (SiC) substrate. Doubly clamped nanomechanical resonators with lengths up to 20 μm were patterned using this technique and their resonant motion was actuated and detected optically. Resonance frequencies of the order of tens of megahertz were measured for most devices, indicating that the resonators are much stiffer than expected for beams under no tension. Raman spectroscopy suggests that the graphene is not chemically modified during the release of the devices, demonstrating that the technique is a robust means of fabricating large-area suspended graphene structures.

Original language	English (US)
Pages (from-to)	3100-3105
Number of pages	6
Journal	Nano Letters
Volume	9
Issue number	9
DOIs	https://doi.org/10.1021/nl900479g
State	Published - Sep 9 2009

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl900479g

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title = "Free-standing epitaxial graphene",

abstract = "We report on a method to produce free-standing graphene sheets from epitaxial graphene on silicon carbide (SiC) substrate. Doubly clamped nanomechanical resonators with lengths up to 20 μm were patterned using this technique and their resonant motion was actuated and detected optically. Resonance frequencies of the order of tens of megahertz were measured for most devices, indicating that the resonators are much stiffer than expected for beams under no tension. Raman spectroscopy suggests that the graphene is not chemically modified during the release of the devices, demonstrating that the technique is a robust means of fabricating large-area suspended graphene structures.",

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AU - Shivaraman, Shriram

AU - Barton, Robert A.

AU - Yu, Xun

AU - Alden, Jonathan

AU - Herman, Lihong

AU - Chandrashekhar, M. S.V.

AU - Park, Jiwoong

AU - McEuen, Paul L.

AU - Parpia, Jeevak M.

AU - Craighead, Harold G.

AU - Spencer, Michael G.

PY - 2009/9/9

Y1 - 2009/9/9

N2 - We report on a method to produce free-standing graphene sheets from epitaxial graphene on silicon carbide (SiC) substrate. Doubly clamped nanomechanical resonators with lengths up to 20 μm were patterned using this technique and their resonant motion was actuated and detected optically. Resonance frequencies of the order of tens of megahertz were measured for most devices, indicating that the resonators are much stiffer than expected for beams under no tension. Raman spectroscopy suggests that the graphene is not chemically modified during the release of the devices, demonstrating that the technique is a robust means of fabricating large-area suspended graphene structures.

AB - We report on a method to produce free-standing graphene sheets from epitaxial graphene on silicon carbide (SiC) substrate. Doubly clamped nanomechanical resonators with lengths up to 20 μm were patterned using this technique and their resonant motion was actuated and detected optically. Resonance frequencies of the order of tens of megahertz were measured for most devices, indicating that the resonators are much stiffer than expected for beams under no tension. Raman spectroscopy suggests that the graphene is not chemically modified during the release of the devices, demonstrating that the technique is a robust means of fabricating large-area suspended graphene structures.

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Free-standing epitaxial graphene

Abstract

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