Abstract
A technique of high voltage electron beam lithography and BCl 3/Ar reactive ion etching for laterally patterning GaAs/Al 0.3Ga0.7As multiple quantum wells is described. The resulting structures were analyzed using scanning electron microscopy and a novel reflection electron microscopy technique, and their geometries are shown. Narrow columns 40 nm in diameter etched 230 nm through the quantum wells were reproducibly fabricated.
Original language | English (US) |
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Pages (from-to) | 1284-1286 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 49 |
Issue number | 19 |
DOIs | |
State | Published - 1986 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)