Fabrication of small laterally patterned multiple quantum wells

A. Scherer; H. G. Craighead

doi:10.1063/1.97387

Fabrication of small laterally patterned multiple quantum wells

A. Scherer, H. G. Craighead

Houston Methodist

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

A technique of high voltage electron beam lithography and BCl ₃/Ar reactive ion etching for laterally patterning GaAs/Al _0.3Ga_0.7As multiple quantum wells is described. The resulting structures were analyzed using scanning electron microscopy and a novel reflection electron microscopy technique, and their geometries are shown. Narrow columns 40 nm in diameter etched 230 nm through the quantum wells were reproducibly fabricated.

Original language	English (US)
Pages (from-to)	1284-1286
Number of pages	3
Journal	Applied Physics Letters
Volume	49
Issue number	19
DOIs	https://doi.org/10.1063/1.97387
State	Published - 1986

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{400596ce4d654a4d8287698a83db362e,

title = "Fabrication of small laterally patterned multiple quantum wells",

abstract = "A technique of high voltage electron beam lithography and BCl 3/Ar reactive ion etching for laterally patterning GaAs/Al 0.3Ga0.7As multiple quantum wells is described. The resulting structures were analyzed using scanning electron microscopy and a novel reflection electron microscopy technique, and their geometries are shown. Narrow columns 40 nm in diameter etched 230 nm through the quantum wells were reproducibly fabricated.",

author = "A. Scherer and Craighead, {H. G.}",

year = "1986",

doi = "10.1063/1.97387",

language = "English (US)",

volume = "49",

pages = "1284--1286",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

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T1 - Fabrication of small laterally patterned multiple quantum wells

AU - Scherer, A.

AU - Craighead, H. G.

PY - 1986

Y1 - 1986

N2 - A technique of high voltage electron beam lithography and BCl 3/Ar reactive ion etching for laterally patterning GaAs/Al 0.3Ga0.7As multiple quantum wells is described. The resulting structures were analyzed using scanning electron microscopy and a novel reflection electron microscopy technique, and their geometries are shown. Narrow columns 40 nm in diameter etched 230 nm through the quantum wells were reproducibly fabricated.

AB - A technique of high voltage electron beam lithography and BCl 3/Ar reactive ion etching for laterally patterning GaAs/Al 0.3Ga0.7As multiple quantum wells is described. The resulting structures were analyzed using scanning electron microscopy and a novel reflection electron microscopy technique, and their geometries are shown. Narrow columns 40 nm in diameter etched 230 nm through the quantum wells were reproducibly fabricated.

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U2 - 10.1063/1.97387

DO - 10.1063/1.97387

M3 - Article

AN - SCOPUS:0010180608

SN - 0003-6951

VL - 49

SP - 1284

EP - 1286

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Fabrication of small laterally patterned multiple quantum wells

Abstract

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