Fabrication of small laterally patterned multiple quantum wells

A. Scherer, H. G. Craighead

Research output: Contribution to journalArticlepeer-review

42 Scopus citations


A technique of high voltage electron beam lithography and BCl 3/Ar reactive ion etching for laterally patterning GaAs/Al 0.3Ga0.7As multiple quantum wells is described. The resulting structures were analyzed using scanning electron microscopy and a novel reflection electron microscopy technique, and their geometries are shown. Narrow columns 40 nm in diameter etched 230 nm through the quantum wells were reproducibly fabricated.

Original languageEnglish (US)
Pages (from-to)1284-1286
Number of pages3
JournalApplied Physics Letters
Issue number19
StatePublished - 1986

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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