Fabrication of small laterally patterned multiple quantum wells

A. Scherer; H. G. Craighead

doi:10.1063/1.97387

Fabrication of small laterally patterned multiple quantum wells

A. Scherer, H. G. Craighead

Research output: Contribution to journal › Article

40 Scopus citations

Abstract

A technique of high voltage electron beam lithography and BCl ₃/Ar reactive ion etching for laterally patterning GaAs/Al _0.3Ga_0.7As multiple quantum wells is described. The resulting structures were analyzed using scanning electron microscopy and a novel reflection electron microscopy technique, and their geometries are shown. Narrow columns 40 nm in diameter etched 230 nm through the quantum wells were reproducibly fabricated.

Original language	English (US)
Pages (from-to)	1284-1286
Number of pages	3
Journal	Applied Physics Letters
Volume	49
Issue number	19
DOIs	https://doi.org/10.1063/1.97387
State	Published - 1986

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.97387

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title = "Fabrication of small laterally patterned multiple quantum wells",

abstract = "A technique of high voltage electron beam lithography and BCl 3/Ar reactive ion etching for laterally patterning GaAs/Al 0.3Ga0.7As multiple quantum wells is described. The resulting structures were analyzed using scanning electron microscopy and a novel reflection electron microscopy technique, and their geometries are shown. Narrow columns 40 nm in diameter etched 230 nm through the quantum wells were reproducibly fabricated.",

author = "A. Scherer and Craighead, {H. G.}",

year = "1986",

doi = "10.1063/1.97387",

language = "English (US)",

volume = "49",

pages = "1284--1286",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "19",

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AU - Scherer, A.

AU - Craighead, H. G.

PY - 1986

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N2 - A technique of high voltage electron beam lithography and BCl 3/Ar reactive ion etching for laterally patterning GaAs/Al 0.3Ga0.7As multiple quantum wells is described. The resulting structures were analyzed using scanning electron microscopy and a novel reflection electron microscopy technique, and their geometries are shown. Narrow columns 40 nm in diameter etched 230 nm through the quantum wells were reproducibly fabricated.

AB - A technique of high voltage electron beam lithography and BCl 3/Ar reactive ion etching for laterally patterning GaAs/Al 0.3Ga0.7As multiple quantum wells is described. The resulting structures were analyzed using scanning electron microscopy and a novel reflection electron microscopy technique, and their geometries are shown. Narrow columns 40 nm in diameter etched 230 nm through the quantum wells were reproducibly fabricated.

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JO - Applied Physics Letters

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