A technique of high voltage electron beam lithography and BCl 3/Ar reactive ion etching for laterally patterning GaAs/Al 0.3Ga0.7As multiple quantum wells is described. The resulting structures were analyzed using scanning electron microscopy and a novel reflection electron microscopy technique, and their geometries are shown. Narrow columns 40 nm in diameter etched 230 nm through the quantum wells were reproducibly fabricated.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)