FABRICATION OF APPROXIMATELY 10 nm STRUCTURES BY ELECTRON BEAM LITHOGRAPHY.

This paper presents a review of techniques for fabricating APP GRTH 10 nm size objects by electron beam lithography and high resolution pattern transfer processes. A scanning electron microscope was used to explore the resolution limits of several organic and inorganic resists systems. With a conventional organic polymer resist on bulk semiconductor substrates, a high energy 120-kev electron beam was able to define patterns approximately 10 nm in width.