FABRICATION OF APPROXIMATELY 10 nm STRUCTURES BY ELECTRON BEAM LITHOGRAPHY.

Research output: Contribution to journalArticle

Abstract

This paper presents a review of techniques for fabricating APP GRTH 10 nm size objects by electron beam lithography and high resolution pattern transfer processes. A scanning electron microscope was used to explore the resolution limits of several organic and inorganic resists systems. With a conventional organic polymer resist on bulk semiconductor substrates, a high energy 120-kev electron beam was able to define patterns approximately 10 nm in width.

Original languageEnglish (US)
Pages (from-to)166-168
Number of pages3
JournalJournal of imaging science
Volume30
Issue number4
StatePublished - Jul 1 1986

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'FABRICATION OF APPROXIMATELY 10 nm STRUCTURES BY ELECTRON BEAM LITHOGRAPHY.'. Together they form a unique fingerprint.

Cite this