This paper presents a review of techniques for fabricating APP GRTH 10 nm size objects by electron beam lithography and high resolution pattern transfer processes. A scanning electron microscope was used to explore the resolution limits of several organic and inorganic resists systems. With a conventional organic polymer resist on bulk semiconductor substrates, a high energy 120-kev electron beam was able to define patterns approximately 10 nm in width.
|Original language||English (US)|
|Number of pages||3|
|Journal||Journal of imaging science|
|State||Published - Jul 1 1986|
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