Fabrication of 20-nm structures in GaAs

Keyphrases

• Gallium Arsenide 100%
• High-resolution 50%
• Electron Beam Lithography 50%
• Electron Beam Resist 50%
• Lift-off 50%
• Reactive Ion Etching 50%
• III-V Materials 50%
• SiCl4 50%
• Metal Mask 50%
• Masking Scheme 50%
• Semiconductor Surface 50%
• NiCrBSi 50%

Material Science

• Gallium Arsenide 100%
• Surface (Surface Science) 50%
• Lithography 50%
• Reactive Ion Etching 50%
• Nichrome 50%