Fabrication of 20-nm structures in GaAs

M. B. Stern, H. G. Craighead, P. F. Liao, P. M. Mankiewich

Research output: Contribution to journalArticlepeer-review

39 Scopus citations


Structures as small as 20 nm have been fabricated in GaAs by high-resolution electron beam lithography and reactive ion etching. NiCr patterns were formed on the semiconductor surface by liftoff of a single-layer electron beam resist. This metal mask pattern was transferred into the III-V material by etching in a SiCl//4 plasma.

Original languageEnglish (US)
Pages (from-to)410-412
Number of pages3
JournalApplied Physics Letters
Issue number4
StatePublished - 1984

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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