Fabrication of 20-nm structures in GaAs

M. B. Stern, Harold G. Craighead, P. F. Liao, P. M. Mankiewich

Research output: Contribution to journalArticle

37 Scopus citations

Abstract

Structures as small as 20 nm have been fabricated in GaAs by high-resolution electron beam lithography and reactive ion etching. NiCr patterns were formed on the semiconductor surface by liftoff of a single-layer electron beam resist. This metal mask pattern was transferred into the III-V material by etching in a SiCl//4 plasma.

Original languageEnglish (US)
Pages (from-to)410-412
Number of pages3
JournalApplied Physics Letters
Volume45
Issue number4
DOIs
StatePublished - Dec 1 1984

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Fabrication of 20-nm structures in GaAs'. Together they form a unique fingerprint.

Cite this