Fabrication of 20-nm structures in GaAs

M. B. Stern; H. G. Craighead; P. F. Liao; P. M. Mankiewich

doi:10.1063/1.95239

Fabrication of 20-nm structures in GaAs

M. B. Stern, H. G. Craighead, P. F. Liao, P. M. Mankiewich

Houston Methodist

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

Structures as small as 20 nm have been fabricated in GaAs by high-resolution electron beam lithography and reactive ion etching. NiCr patterns were formed on the semiconductor surface by liftoff of a single-layer electron beam resist. This metal mask pattern was transferred into the III-V material by etching in a SiCl//4 plasma.

Original language	English (US)
Pages (from-to)	410-412
Number of pages	3
Journal	Applied Physics Letters
Volume	45
Issue number	4
DOIs	https://doi.org/10.1063/1.95239
State	Published - 1984

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.95239

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@article{76b3ea99a7ed431684e9212f2ec37e8e,

title = "Fabrication of 20-nm structures in GaAs",

abstract = "Structures as small as 20 nm have been fabricated in GaAs by high-resolution electron beam lithography and reactive ion etching. NiCr patterns were formed on the semiconductor surface by liftoff of a single-layer electron beam resist. This metal mask pattern was transferred into the III-V material by etching in a SiCl//4 plasma.",

author = "Stern, {M. B.} and Craighead, {H. G.} and Liao, {P. F.} and Mankiewich, {P. M.}",

year = "1984",

doi = "10.1063/1.95239",

language = "English (US)",

volume = "45",

pages = "410--412",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "4",

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T1 - Fabrication of 20-nm structures in GaAs

AU - Stern, M. B.

AU - Craighead, H. G.

AU - Liao, P. F.

AU - Mankiewich, P. M.

PY - 1984

Y1 - 1984

N2 - Structures as small as 20 nm have been fabricated in GaAs by high-resolution electron beam lithography and reactive ion etching. NiCr patterns were formed on the semiconductor surface by liftoff of a single-layer electron beam resist. This metal mask pattern was transferred into the III-V material by etching in a SiCl//4 plasma.

AB - Structures as small as 20 nm have been fabricated in GaAs by high-resolution electron beam lithography and reactive ion etching. NiCr patterns were formed on the semiconductor surface by liftoff of a single-layer electron beam resist. This metal mask pattern was transferred into the III-V material by etching in a SiCl//4 plasma.

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U2 - 10.1063/1.95239

DO - 10.1063/1.95239

M3 - Article

AN - SCOPUS:0021479017

SN - 0003-6951

VL - 45

SP - 410

EP - 412

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Fabrication of 20-nm structures in GaAs

Abstract

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