Experimental investigation of the effect of wetting-layer states on the gain-current characteristic of quantum-dot lasers

D. R. Matthews; H. D. Summers; P. M. Smowton; M. Hopkinson

doi:10.1063/1.1532549

Experimental investigation of the effect of wetting-layer states on the gain-current characteristic of quantum-dot lasers

D. R. Matthews, H. D. Summers, P. M. Smowton, M. Hopkinson

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Abstract

The effect of wetting-layer states on the gain-current characteristics of quantum dot lasers was discussed. It was demonstrated that the saturation results from occupancy of high lying energy states rather than complete population inversion of the available dot states. The gain data indicated that at 100 K the dots are decoupled from the wetting layer and in this case total population inversion can be achieved.

Original language	English (US)
Pages (from-to)	4904-4906
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	26
DOIs	https://doi.org/10.1063/1.1532549
State	Published - Dec 23 2002

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1532549

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title = "Experimental investigation of the effect of wetting-layer states on the gain-current characteristic of quantum-dot lasers",

abstract = "The effect of wetting-layer states on the gain-current characteristics of quantum dot lasers was discussed. It was demonstrated that the saturation results from occupancy of high lying energy states rather than complete population inversion of the available dot states. The gain data indicated that at 100 K the dots are decoupled from the wetting layer and in this case total population inversion can be achieved.",

author = "Matthews, {D. R.} and Summers, {H. D.} and Smowton, {P. M.} and M. Hopkinson",

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AU - Hopkinson, M.

PY - 2002/12/23

Y1 - 2002/12/23

N2 - The effect of wetting-layer states on the gain-current characteristics of quantum dot lasers was discussed. It was demonstrated that the saturation results from occupancy of high lying energy states rather than complete population inversion of the available dot states. The gain data indicated that at 100 K the dots are decoupled from the wetting layer and in this case total population inversion can be achieved.

AB - The effect of wetting-layer states on the gain-current characteristics of quantum dot lasers was discussed. It was demonstrated that the saturation results from occupancy of high lying energy states rather than complete population inversion of the available dot states. The gain data indicated that at 100 K the dots are decoupled from the wetting layer and in this case total population inversion can be achieved.

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Experimental investigation of the effect of wetting-layer states on the gain-current characteristic of quantum-dot lasers

Abstract

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