Experimental investigation of the differential gain in semiconductor lasers and its influence on Q-switching performance

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Abstract

The gain spectra of AlGaInP, single quantum well, laser diodes were obtained by measurement of their spontaneous emission spectra and subsequent conversion according to the Einstein relations. From these spectra the ratio of differential absorption to differential gain, γ was calculated. At energies greater than the lasing transition a threefold increase in the differential absorption may be achieved in compressively strained devices, giving a value of γ=14.4. These results indicate that by detuning the saturable absorber energy within a Q-switched device by 20 meV a doubling of the inversion factor may be obtained.

Original languageEnglish (US)
Pages (from-to)2009-2011
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number14
DOIs
StatePublished - Sep 30 1996

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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