We have produced self-pulsating 650-nm-wavelength AlGaInP lasers by the inclusion of saturable absorbing quantum wells (QW's) within the p-doped cladding layer. To maintain the pulsation characteristics at high temperature, a multiple QW design has been used. This reduces the saturation of the absorbing layers due to thermally activated charge leakage from the active region of the laser, thus enabling strong self-pulsation up to a maximum temperature of 100°C. The dynamic characteristics of the absorber wells have been measured using time-resolved photoluminescence techniques on the laser structures. The results indicate that the carrier lifetime in the absorber is determined by nonradiative processes with a typical decay time of 0.3 ns.
|Original language||English (US)|
|Number of pages||5|
|Journal||IEEE Journal on Selected Topics in Quantum Electronics|
|State||Published - May 1999|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering