Etching and cathodoluminescence studies of ZnSe

E. M. Clausen, H. G. Craighead, M. C. Tamargo, J. L. De Miguel, L. M. Schiavone

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

Epitaxial thin films of ZnSe grown on GaAs substrates were reactive ion etched using BCl3 /Ar gas mixtures. Using an optimized etching process, photolithographically defined micrometer sized structures were etched several micrometers deep with straight sidewalls and smooth surfaces. Cathodoluminescence was measured from both etched and unetched surfaces at room temperature. Luminescence intensities of etched surfaces are shown not to be degraded by the reactive ion etching process. Cathodoluminescence intensities of etched pixels with exposed sidewalls were found to be greater than the intensities measured from unetched flat surfaces. This suggests the possibility of efficient etched light-emitting structures.

Original languageEnglish (US)
Pages (from-to)690-691
Number of pages2
JournalApplied Physics Letters
Volume53
Issue number8
DOIs
StatePublished - 1988

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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