Abstract
Self-assembled monolayers have been demonstrated to perform as high-resolution electron beam resists with minimum resolutions of <20nm for 50keV electron beams and <15nm for 10eV electrons from a scanning tunneling microscope. The resulting patterns have been transferred into many substrates by both wet and dry etching.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 43-46 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 27 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - Feb 1995 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
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