Abstract
The electron and hole energy levels in a typical `lens' shaped self assembled quantum dot (SAQD) were investigated using adiabatic approximation. In this adiabatic approximation, the Hamiltonian for the electrons can be separated into the direction perpendicular to the growth plane and a radial direction. The density of states is used to calculate optical gain and determine how the inhomogeneous broadening affects the properties of optoelectronic devices.
| Original language | English |
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| Title of host publication | Conference on Lasers and Electro-Optics Europe - Technical Digest |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| State | Published - Jan 1 2000 |
| Event | 2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France Duration: Sep 10 2000 → Sep 15 2000 |
Other
| Other | 2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) |
|---|---|
| City | Nice, France |
| Period | 9/10/00 → 9/15/00 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering