Effect of inhomogeneous broadening on the optical properties of quantum dots

A. Owen, Paul Rees, I. Pierce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The electron and hole energy levels in a typical `lens' shaped self assembled quantum dot (SAQD) were investigated using adiabatic approximation. In this adiabatic approximation, the Hamiltonian for the electrons can be separated into the direction perpendicular to the growth plane and a radial direction. The density of states is used to calculate optical gain and determine how the inhomogeneous broadening affects the properties of optoelectronic devices.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics Europe - Technical Digest
Place of PublicationPiscataway, NJ, United States
PublisherInstitute of Electrical and Electronics Engineers Inc.
StatePublished - Jan 1 2000
Event2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France
Duration: Sep 10 2000Sep 15 2000

Other

Other2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)
CityNice, France
Period9/10/009/15/00

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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