Effect of carrier heating on chirp and modulation response of directly modulated semiconductor laser diodes

Iestyn Pierce, Paul Rees, Paul S. Spencer, K. Alan Shore

Research output: Contribution to journalArticle

Abstract

This paper examines the effect of carrier heating due to hot carrier injection in directly modulated semiconductor laser diodes. Using a single-mode rate equation model including an equation for the energy stored in the conduction band carriers, the changes in carrier temperature due to hot carrier injection from the barrier layer in quantum-well laser diodes are seen to cause a degradation in the device's sinusoidal modulation response. This degradation is coupled with an increase in the wavelength chirp of the light output. It is concluded that in order to minimize the detrimental effect of carrier heating on directly modulated quantum well laser diodes the barrier height should be kept as small as practical. Additionally, the appreciable change in device performance brought about by carrier heating should be accounted for when modelling such devices.

Original languageEnglish (US)
Pages (from-to)1969-1976
Number of pages8
JournalJournal of Modern Optics
Volume47
Issue number11
DOIs
StatePublished - Jan 1 2000

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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