Abstract
In the first comparison of identical 1.3μm InAs/AlGaAs quantum-dot structures grown on silicon (with defect filter layers, but no germanium) and GaAs substrates, both demonstrate dot-state emission of similar intensity, spectral breadth and areal dot density (3.3-3.5×1010cm-2) with a 35nm blue shift on silicon.
Original language | English (US) |
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Title of host publication | 2016 International Semiconductor Laser Conference, ISLC 2016 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9784885523069 |
State | Published - Dec 2 2016 |
Event | 2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan Duration: Sep 12 2016 → Sep 15 2016 |
Other
Other | 2016 International Semiconductor Laser Conference, ISLC 2016 |
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Country/Territory | Japan |
City | Kobe |
Period | 9/12/16 → 9/15/16 |
Keywords
- quantum-dot laser InAs GaAs Silicon low-loss
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering