Dot state properties of 1.3 μm low-loss InAs quantum dot lasers grown directly on Si

S. N. Elliott, S. Shutts, A. Sobiesierski, Paul Rees, P. M. Smowton, M. Tang, J. Wu, H. Y. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In the first comparison of identical 1.3μm InAs/AlGaAs quantum-dot structures grown on silicon (with defect filter layers, but no germanium) and GaAs substrates, both demonstrate dot-state emission of similar intensity, spectral breadth and areal dot density (3.3-3.5×1010cm-2) with a 35nm blue shift on silicon.

Original languageEnglish (US)
Title of host publication2016 International Semiconductor Laser Conference, ISLC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784885523069
StatePublished - Dec 2 2016
Event2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan
Duration: Sep 12 2016Sep 15 2016

Other

Other2016 International Semiconductor Laser Conference, ISLC 2016
CountryJapan
CityKobe
Period9/12/169/15/16

Keywords

  • quantum-dot laser InAs GaAs Silicon low-loss

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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