Dot state properties of 1.3 μm low-loss InAs quantum dot lasers grown directly on Si

S. N. Elliott; S. Shutts; A. Sobiesierski; Paul Rees; P. M. Smowton; M. Tang; J. Wu; H. Y. Liu

Dot state properties of 1.3 μm low-loss InAs quantum dot lasers grown directly on Si

S. N. Elliott, S. Shutts, A. Sobiesierski, Paul Rees, P. M. Smowton, M. Tang, J. Wu, H. Y. Liu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In the first comparison of identical 1.3μm InAs/AlGaAs quantum-dot structures grown on silicon (with defect filter layers, but no germanium) and GaAs substrates, both demonstrate dot-state emission of similar intensity, spectral breadth and areal dot density (3.3-3.5×10¹⁰cm^-2) with a 35nm blue shift on silicon.

Original language	English (US)
Title of host publication	2016 International Semiconductor Laser Conference, ISLC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784885523069
State	Published - Dec 2 2016
Event	2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan Duration: Sep 12 2016 → Sep 15 2016

Other

Other	2016 International Semiconductor Laser Conference, ISLC 2016
Country	Japan
City	Kobe
Period	9/12/16 → 9/15/16

Keywords

quantum-dot laser InAs GaAs Silicon low-loss

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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Dot state properties of 1.3 μm low-loss InAs quantum dot lasers grown directly on Si. / Elliott, S. N.; Shutts, S.; Sobiesierski, A.; Rees, Paul; Smowton, P. M.; Tang, M.; Wu, J.; Liu, H. Y.

2016 International Semiconductor Laser Conference, ISLC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7765701.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Elliott, SN, Shutts, S, Sobiesierski, A, Rees, P, Smowton, PM, Tang, M, Wu, J & Liu, HY 2016, Dot state properties of 1.3 μm low-loss InAs quantum dot lasers grown directly on Si. in 2016 International Semiconductor Laser Conference, ISLC 2016., 7765701, Institute of Electrical and Electronics Engineers Inc., 2016 International Semiconductor Laser Conference, ISLC 2016, Kobe, Japan, 9/12/16.

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AU - Wu, J.

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