Dot state properties of 1.3 μm low-loss InAs quantum dot lasers grown directly on Si

S. N. Elliott; S. Shutts; A. Sobiesierski; Paul Rees; P. M. Smowton; M. Tang; J. Wu; H. Y. Liu

Dot state properties of 1.3 μm low-loss InAs quantum dot lasers grown directly on Si

S. N. Elliott, S. Shutts, A. Sobiesierski, Paul Rees, P. M. Smowton, M. Tang, J. Wu, H. Y. Liu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In the first comparison of identical 1.3μm InAs/AlGaAs quantum-dot structures grown on silicon (with defect filter layers, but no germanium) and GaAs substrates, both demonstrate dot-state emission of similar intensity, spectral breadth and areal dot density (3.3-3.5×10¹⁰cm^-2) with a 35nm blue shift on silicon.

Original language	English (US)
Title of host publication	2016 International Semiconductor Laser Conference, ISLC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784885523069
State	Published - Dec 2 2016
Event	2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan Duration: Sep 12 2016 → Sep 15 2016

Other

Other	2016 International Semiconductor Laser Conference, ISLC 2016
Country/Territory	Japan
City	Kobe
Period	9/12/16 → 9/15/16

Keywords

quantum-dot laser InAs GaAs Silicon low-loss

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Cite this

Elliott, SN, Shutts, S, Sobiesierski, A, Rees, P, Smowton, PM, Tang, M, Wu, J & Liu, HY 2016, Dot state properties of 1.3 μm low-loss InAs quantum dot lasers grown directly on Si. in 2016 International Semiconductor Laser Conference, ISLC 2016., 7765701, Institute of Electrical and Electronics Engineers Inc., 2016 International Semiconductor Laser Conference, ISLC 2016, Kobe, Japan, 9/12/16.

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abstract = "In the first comparison of identical 1.3μm InAs/AlGaAs quantum-dot structures grown on silicon (with defect filter layers, but no germanium) and GaAs substrates, both demonstrate dot-state emission of similar intensity, spectral breadth and areal dot density (3.3-3.5×1010cm-2) with a 35nm blue shift on silicon.",

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AU - Elliott, S. N.

AU - Shutts, S.

AU - Sobiesierski, A.

AU - Rees, Paul

AU - Smowton, P. M.

AU - Tang, M.

AU - Wu, J.

AU - Liu, H. Y.

PY - 2016/12/2

Y1 - 2016/12/2

N2 - In the first comparison of identical 1.3μm InAs/AlGaAs quantum-dot structures grown on silicon (with defect filter layers, but no germanium) and GaAs substrates, both demonstrate dot-state emission of similar intensity, spectral breadth and areal dot density (3.3-3.5×1010cm-2) with a 35nm blue shift on silicon.

AB - In the first comparison of identical 1.3μm InAs/AlGaAs quantum-dot structures grown on silicon (with defect filter layers, but no germanium) and GaAs substrates, both demonstrate dot-state emission of similar intensity, spectral breadth and areal dot density (3.3-3.5×1010cm-2) with a 35nm blue shift on silicon.

KW - quantum-dot laser InAs GaAs Silicon low-loss

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M3 - Conference contribution

AN - SCOPUS:85014144157

BT - 2016 International Semiconductor Laser Conference, ISLC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 International Semiconductor Laser Conference, ISLC 2016

Y2 - 12 September 2016 through 15 September 2016

ER -

Dot state properties of 1.3 μm low-loss InAs quantum dot lasers grown directly on Si

Abstract

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Keywords

ASJC Scopus subject areas

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