Disordering of AlAs-GaAs superlattices by Si and S implantation at different implant temperatures

E. A. Dobisz; B. Tell; H. G. Craighead; M. C. Tamargo

doi:10.1063/1.337497

Disordering of AlAs-GaAs superlattices by Si and S implantation at different implant temperatures

E. A. Dobisz, B. Tell, H. G. Craighead, M. C. Tamargo

Houston Methodist

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31 Scopus citations

Abstract

We have investigated by transmission electron microscopy the enhanced disordering of GaAs-AlAs superlattices due to Si and S implantation with subsquent annealing. The implants were performed at 77 K, room temperature, and 210°C at a dose of 2.5×10¹⁴ cm^- ² with energy of 100 keV. The greatest enhancement occurs, after annealing, for Si implants performed at 77 K. We find no enhancement due to S implants. The apparent damage due to implantation prior to annealing is strikingly less for superlattices compared with bulk GaAs.

Original language	English (US)
Pages (from-to)	4150-4153
Number of pages	4
Journal	Journal of Applied Physics
Volume	60
Issue number	12
DOIs	https://doi.org/10.1063/1.337497
State	Published - 1986

ASJC Scopus subject areas

General Physics and Astronomy

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abstract = "We have investigated by transmission electron microscopy the enhanced disordering of GaAs-AlAs superlattices due to Si and S implantation with subsquent annealing. The implants were performed at 77 K, room temperature, and 210°C at a dose of 2.5×1014 cm- 2 with energy of 100 keV. The greatest enhancement occurs, after annealing, for Si implants performed at 77 K. We find no enhancement due to S implants. The apparent damage due to implantation prior to annealing is strikingly less for superlattices compared with bulk GaAs.",

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year = "1986",

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pages = "4150--4153",

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T1 - Disordering of AlAs-GaAs superlattices by Si and S implantation at different implant temperatures

AU - Dobisz, E. A.

AU - Tell, B.

AU - Craighead, H. G.

AU - Tamargo, M. C.

PY - 1986

Y1 - 1986

N2 - We have investigated by transmission electron microscopy the enhanced disordering of GaAs-AlAs superlattices due to Si and S implantation with subsquent annealing. The implants were performed at 77 K, room temperature, and 210°C at a dose of 2.5×1014 cm- 2 with energy of 100 keV. The greatest enhancement occurs, after annealing, for Si implants performed at 77 K. We find no enhancement due to S implants. The apparent damage due to implantation prior to annealing is strikingly less for superlattices compared with bulk GaAs.

AB - We have investigated by transmission electron microscopy the enhanced disordering of GaAs-AlAs superlattices due to Si and S implantation with subsquent annealing. The implants were performed at 77 K, room temperature, and 210°C at a dose of 2.5×1014 cm- 2 with energy of 100 keV. The greatest enhancement occurs, after annealing, for Si implants performed at 77 K. We find no enhancement due to S implants. The apparent damage due to implantation prior to annealing is strikingly less for superlattices compared with bulk GaAs.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Disordering of AlAs-GaAs superlattices by Si and S implantation at different implant temperatures

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