Disordering of AlAs-GaAs superlattices by Si and S implantation at different implant temperatures

E. A. Dobisz, B. Tell, H. G. Craighead, M. C. Tamargo

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

We have investigated by transmission electron microscopy the enhanced disordering of GaAs-AlAs superlattices due to Si and S implantation with subsquent annealing. The implants were performed at 77 K, room temperature, and 210°C at a dose of 2.5×1014 cm- 2 with energy of 100 keV. The greatest enhancement occurs, after annealing, for Si implants performed at 77 K. We find no enhancement due to S implants. The apparent damage due to implantation prior to annealing is strikingly less for superlattices compared with bulk GaAs.

Original languageEnglish (US)
Pages (from-to)4150-4153
Number of pages4
JournalJournal of Applied Physics
Volume60
Issue number12
DOIs
StatePublished - 1986

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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