Determination of single-pass optical gain and internal loss using a multisection device

J. D. Thomson; H. D. Summers; P. J. Hulyer; P. M. Smowton; P. Blood

doi:10.1063/1.125066

Determination of single-pass optical gain and internal loss using a multisection device

J. D. Thomson, H. D. Summers, P. J. Hulyer, P. M. Smowton, P. Blood

Houston Methodist

Research output: Contribution to journal › Article › peer-review

123 Scopus citations

Abstract

We describe a technique for the measurement of optical gain and loss in semiconductor lasers using a single, multisection device. The method provides a complete description of the gain spectrum in absolute units and over a wide current range. Comparison of the transverse electric and transverse magnetic polarized spectra also provides the quasi-Fermi-level energy separation. Measurements on AlGaInP quantum well laser structures with emission wavelengths close to 670 nm show an internal loss of 10 cm^-1 and peak gain values up to 4000 cm-¹ for current densities up to 4 kA cm^-2.

Original language	English (US)
Pages (from-to)	2527-2529
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	17
DOIs	https://doi.org/10.1063/1.125066
State	Published - Oct 25 1999

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.125066

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abstract = "We describe a technique for the measurement of optical gain and loss in semiconductor lasers using a single, multisection device. The method provides a complete description of the gain spectrum in absolute units and over a wide current range. Comparison of the transverse electric and transverse magnetic polarized spectra also provides the quasi-Fermi-level energy separation. Measurements on AlGaInP quantum well laser structures with emission wavelengths close to 670 nm show an internal loss of 10 cm-1 and peak gain values up to 4000 cm-1 for current densities up to 4 kA cm-2.",

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AU - Summers, H. D.

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AU - Smowton, P. M.

AU - Blood, P.

PY - 1999/10/25

Y1 - 1999/10/25

N2 - We describe a technique for the measurement of optical gain and loss in semiconductor lasers using a single, multisection device. The method provides a complete description of the gain spectrum in absolute units and over a wide current range. Comparison of the transverse electric and transverse magnetic polarized spectra also provides the quasi-Fermi-level energy separation. Measurements on AlGaInP quantum well laser structures with emission wavelengths close to 670 nm show an internal loss of 10 cm-1 and peak gain values up to 4000 cm-1 for current densities up to 4 kA cm-2.

AB - We describe a technique for the measurement of optical gain and loss in semiconductor lasers using a single, multisection device. The method provides a complete description of the gain spectrum in absolute units and over a wide current range. Comparison of the transverse electric and transverse magnetic polarized spectra also provides the quasi-Fermi-level energy separation. Measurements on AlGaInP quantum well laser structures with emission wavelengths close to 670 nm show an internal loss of 10 cm-1 and peak gain values up to 4000 cm-1 for current densities up to 4 kA cm-2.

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Determination of single-pass optical gain and internal loss using a multisection device

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