Abstract
We report on a methodology for simultaneous determination of the young's modulus and density of ultrathin films from a resonance experiment. The approach is based on an interferrometric detection of the in-plane and out-of-plane resonant responses of an optically excited single crystal Si nano cantilever prior and after Atomic Layer Deposition (ALD) of a thin film. The frequencies shifts were measured at the same structure reducing sensitivity to scattering in geometric parameters and clamping compliances. Experimental results obtained for A1203 (alumina) and HfO2 (hafnia) were consistent with the model predictions and the data available in literature.
Original language | English (US) |
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Article number | 4805466 |
Pages (from-to) | 650-653 |
Number of pages | 4 |
Journal | Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) |
DOIs | |
State | Published - Jun 1 2009 |
Event | 22nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2009 - Sorrento, Italy Duration: Jan 25 2009 → Jan 29 2009 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Mechanical Engineering
- Electrical and Electronic Engineering