Deposition and growth with desorption for CdTe molecular beam epitaxy

Philippe Peyla, Alberto Pimpinelli, Joël Cibert, Serge Tatarenko

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

It is well known that during epitaxial growth of thin films of almost all II-VI semiconductors, the growth rates show a pronounced temperature dependence which is due to desorption of one or both components from the growing surface. The measured desorption rate appears to be thermally activated with a strikingly small value: a few tenths of an eV. The explanation generally put forward is that the desorption of a weak-binding state acts as a "precursor" to chemisorption. According to this point of view, the small measured activation energy is a real energy corresponding to a well-defined microscopic process. We argue that no weak-binding precursor state is needed for reproducing the experimental growth rate of CdTe. Using Burton, Cabrera and Frank's theory and by performing Monte Carlo simulations of a one-particle model for deposition, diffusion, aggregation and desorption, we have found that the macroscopic desorption rate appears to be thermally activated over a large range of temperatures. This rate is a combination of all the microscopic energies - diffusion barrier and desorption barrier - and it can take values of a few tenths of an electronvolt, even though all microscopic energies are much larger. A very simplified model of CdTe growth is thus proposed and tested against experimental measurements of growth rates for various temperatures and deposition fluxes

Original languageEnglish (US)
Pages (from-to)75-79
Number of pages5
JournalJournal of Crystal Growth
Volume184-185
DOIs
StatePublished - Jan 1 1998

Keywords

  • Desorption
  • Growth rate
  • II-VI
  • MBE

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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