Cross-sectional scanning tunneling microscopy of InGaAs quantum dots

C. K. Harnett; S. Evoy; Harold G. Craighead; K. Pond; J. Kim; A. Gossard

Cross-sectional scanning tunneling microscopy of InGaAs quantum dots

C. K. Harnett, S. Evoy, Harold G. Craighead, K. Pond, J. Kim, A. Gossard

Houston Methodist

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Topographic cross-sectional scanning tunneling microscopy is used to study InGaAs quantum dots (QDs), showing dot sizes of approximately 20 nm, consistent with atomic force microscopy measurements on similar samples. Current-vs-voltage measurements on the quantum dots feature a lower tunneling current turn-on for the dots than the surrounding areas. Tunneling-induced luminescence images from the surrounding layers provide additional information about carrier behavior within the system.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics Europe - Technical Digest
Editors	Anon
Place of Publication	Piscataway, NJ, United States
Publisher	Institute of Electrical and Electronics Engineers Inc.
State	Published - Jan 1 1998
Event	Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO - San Francisco, CA, USA Duration: May 3 1998 → May 8 1998

Other

Other	Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO
City	San Francisco, CA, USA
Period	5/3/98 → 5/8/98

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

Cite this

Cross-sectional scanning tunneling microscopy of InGaAs quantum dots. / Harnett, C. K.; Evoy, S.; Craighead, Harold G. et al.
Conference on Lasers and Electro-Optics Europe - Technical Digest. ed. / Anon. Piscataway, NJ, United States: Institute of Electrical and Electronics Engineers Inc., 1998.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Harnett, CK, Evoy, S, Craighead, HG, Pond, K, Kim, J & Gossard, A 1998, Cross-sectional scanning tunneling microscopy of InGaAs quantum dots. in Anon (ed.), Conference on Lasers and Electro-Optics Europe - Technical Digest. Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ, United States, Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO, San Francisco, CA, USA, 5/3/98.

@inproceedings{b83e5d60773f4ae8baab8fa67fff3c8e,

title = "Cross-sectional scanning tunneling microscopy of InGaAs quantum dots",

abstract = "Topographic cross-sectional scanning tunneling microscopy is used to study InGaAs quantum dots (QDs), showing dot sizes of approximately 20 nm, consistent with atomic force microscopy measurements on similar samples. Current-vs-voltage measurements on the quantum dots feature a lower tunneling current turn-on for the dots than the surrounding areas. Tunneling-induced luminescence images from the surrounding layers provide additional information about carrier behavior within the system.",

author = "Harnett, \{C. K.\} and S. Evoy and Craighead, \{Harold G.\} and K. Pond and J. Kim and A. Gossard",

year = "1998",

month = jan,

day = "1",

language = "English",

editor = "Anon",

booktitle = "Conference on Lasers and Electro-Optics Europe - Technical Digest",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO ; Conference date: 03-05-1998 Through 08-05-1998",

}

TY - GEN

T1 - Cross-sectional scanning tunneling microscopy of InGaAs quantum dots

AU - Harnett, C. K.

AU - Evoy, S.

AU - Craighead, Harold G.

AU - Pond, K.

AU - Kim, J.

AU - Gossard, A.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Topographic cross-sectional scanning tunneling microscopy is used to study InGaAs quantum dots (QDs), showing dot sizes of approximately 20 nm, consistent with atomic force microscopy measurements on similar samples. Current-vs-voltage measurements on the quantum dots feature a lower tunneling current turn-on for the dots than the surrounding areas. Tunneling-induced luminescence images from the surrounding layers provide additional information about carrier behavior within the system.

AB - Topographic cross-sectional scanning tunneling microscopy is used to study InGaAs quantum dots (QDs), showing dot sizes of approximately 20 nm, consistent with atomic force microscopy measurements on similar samples. Current-vs-voltage measurements on the quantum dots feature a lower tunneling current turn-on for the dots than the surrounding areas. Tunneling-induced luminescence images from the surrounding layers provide additional information about carrier behavior within the system.

UR - https://www.scopus.com/pages/publications/0031617980

UR - https://www.scopus.com/inward/citedby.url?scp=0031617980&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0031617980

BT - Conference on Lasers and Electro-Optics Europe - Technical Digest

A2 - Anon, null

PB - Institute of Electrical and Electronics Engineers Inc.

CY - Piscataway, NJ, United States

T2 - Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO

Y2 - 3 May 1998 through 8 May 1998

ER -

Cross-sectional scanning tunneling microscopy of InGaAs quantum dots

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this