Cross-sectional scanning tunneling microscopy of InGaAs quantum dots

C. K. Harnett, S. Evoy, Harold G. Craighead, K. Pond, J. Kim, A. Gossard

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Topographic cross-sectional scanning tunneling microscopy is used to study InGaAs quantum dots (QDs), showing dot sizes of approximately 20 nm, consistent with atomic force microscopy measurements on similar samples. Current-vs-voltage measurements on the quantum dots feature a lower tunneling current turn-on for the dots than the surrounding areas. Tunneling-induced luminescence images from the surrounding layers provide additional information about carrier behavior within the system.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics Europe - Technical Digest
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherInstitute of Electrical and Electronics Engineers Inc.
StatePublished - Jan 1 1998
EventProceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO - San Francisco, CA, USA
Duration: May 3 1998May 8 1998

Other

OtherProceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO
CitySan Francisco, CA, USA
Period5/3/985/8/98

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Cross-sectional scanning tunneling microscopy of InGaAs quantum dots'. Together they form a unique fingerprint.

Cite this