Abstract
Topographic cross-sectional scanning tunneling microscopy is used to study InGaAs quantum dots (QDs), showing dot sizes of approximately 20 nm, consistent with atomic force microscopy measurements on similar samples. Current-vs-voltage measurements on the quantum dots feature a lower tunneling current turn-on for the dots than the surrounding areas. Tunneling-induced luminescence images from the surrounding layers provide additional information about carrier behavior within the system.
Original language | English |
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Title of host publication | Conference on Lasers and Electro-Optics Europe - Technical Digest |
Editors | Anon |
Place of Publication | Piscataway, NJ, United States |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
State | Published - Jan 1 1998 |
Event | Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO - San Francisco, CA, USA Duration: May 3 1998 → May 8 1998 |
Other
Other | Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO |
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City | San Francisco, CA, USA |
Period | 5/3/98 → 5/8/98 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering