Critical issues in laser diode calculations

Peter Blood, Paul Rees, Craig Cooper, Peter Smowton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations


We have examined the critical factors in calculations of optical gain and spontaneous recombination in GaAs, GaInP, and GaN semiconductor quantum well systems, in particular, the behavior of the transparency current and the effects of Coulomb enhancement. We have also compared the optical confinement factors, and the relative importance of spectral broadening by de-phasing of the polarization due to carrier-carrier interactions and by unintentional monolayer well width variations. These effects are quantified for the three material systems. We also present the results of full simulations of the potential distribution through GaInP laser structures and compare these with the common flat-band approach.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Number of pages11
StatePublished - 1996
EventPhysics and Simulation of Optoelectronic Devices IV - San Jose, CA, USA
Duration: Jan 29 1996Feb 2 1996


OtherPhysics and Simulation of Optoelectronic Devices IV
CitySan Jose, CA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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