Critical issues in laser diode calculations

Peter Blood; Paul Rees; Craig Cooper; Peter Smowton

doi:10.1117/12.238980

Critical issues in laser diode calculations

Peter Blood, Paul Rees, Craig Cooper, Peter Smowton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

We have examined the critical factors in calculations of optical gain and spontaneous recombination in GaAs, GaInP, and GaN semiconductor quantum well systems, in particular, the behavior of the transparency current and the effects of Coulomb enhancement. We have also compared the optical confinement factors, and the relative importance of spectral broadening by de-phasing of the polarization due to carrier-carrier interactions and by unintentional monolayer well width variations. These effects are quantified for the three material systems. We also present the results of full simulations of the potential distribution through GaInP laser structures and compare these with the common flat-band approach.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Pages	444-454
Number of pages	11
Volume	2693
DOIs	https://doi.org/10.1117/12.238980
State	Published - 1996
Event	Physics and Simulation of Optoelectronic Devices IV - San Jose, CA, USA Duration: Jan 29 1996 → Feb 2 1996

Other

Other	Physics and Simulation of Optoelectronic Devices IV
City	San Jose, CA, USA
Period	1/29/96 → 2/2/96

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.238980

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title = "Critical issues in laser diode calculations",

abstract = "We have examined the critical factors in calculations of optical gain and spontaneous recombination in GaAs, GaInP, and GaN semiconductor quantum well systems, in particular, the behavior of the transparency current and the effects of Coulomb enhancement. We have also compared the optical confinement factors, and the relative importance of spectral broadening by de-phasing of the polarization due to carrier-carrier interactions and by unintentional monolayer well width variations. These effects are quantified for the three material systems. We also present the results of full simulations of the potential distribution through GaInP laser structures and compare these with the common flat-band approach.",

author = "Peter Blood and Paul Rees and Craig Cooper and Peter Smowton",

year = "1996",

doi = "10.1117/12.238980",

language = "English (US)",

isbn = "0819420670",

volume = "2693",

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booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Physics and Simulation of Optoelectronic Devices IV ; Conference date: 29-01-1996 Through 02-02-1996",

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T1 - Critical issues in laser diode calculations

AU - Blood, Peter

AU - Rees, Paul

AU - Cooper, Craig

AU - Smowton, Peter

PY - 1996

Y1 - 1996

N2 - We have examined the critical factors in calculations of optical gain and spontaneous recombination in GaAs, GaInP, and GaN semiconductor quantum well systems, in particular, the behavior of the transparency current and the effects of Coulomb enhancement. We have also compared the optical confinement factors, and the relative importance of spectral broadening by de-phasing of the polarization due to carrier-carrier interactions and by unintentional monolayer well width variations. These effects are quantified for the three material systems. We also present the results of full simulations of the potential distribution through GaInP laser structures and compare these with the common flat-band approach.

AB - We have examined the critical factors in calculations of optical gain and spontaneous recombination in GaAs, GaInP, and GaN semiconductor quantum well systems, in particular, the behavior of the transparency current and the effects of Coulomb enhancement. We have also compared the optical confinement factors, and the relative importance of spectral broadening by de-phasing of the polarization due to carrier-carrier interactions and by unintentional monolayer well width variations. These effects are quantified for the three material systems. We also present the results of full simulations of the potential distribution through GaInP laser structures and compare these with the common flat-band approach.

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DO - 10.1117/12.238980

M3 - Conference contribution

AN - SCOPUS:0029728223

SN - 0819420670

SN - 9780819420671

VL - 2693

SP - 444

EP - 454

BT - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Physics and Simulation of Optoelectronic Devices IV

Y2 - 29 January 1996 through 2 February 1996

ER -

Critical issues in laser diode calculations

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