Control of the growth morphologies of GaAs stripes grown on patterned substrates by HVPE

J. Napierala, E. Gil-Lafon, D. Castelluci, A. Pimpinelli, B. Gérard

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations


Selective growth experiments of GaAs were carried out by HVPE on (0 0 1) GaAs substrates. [1 1 0] and [1 - 1 0] oriented stripes exhibited various morphological profiles bounded by (0 0 1), (1 1 0) or (1 1 1) faces, depending on the III/V ratio, the supersaturation parameter and the temperature. Criteria for the appearance of the faces were determined and summarised through straightforward mathematical relations. The growth morphology depends on the growth anisotropy, precisely on the hierarchies of the growth rates of the low index faces. Kinetic Wulff constructions were built by referring to the growth rates that were experimentally assessed on (1 1 0) and (1 1 1) substrates. The good adequacy between the constructions and the morphology of the selective stripes demonstrates again that HVPE growth is mainly governed by surface kinetics.

Original languageEnglish (US)
Pages (from-to)315-318
Number of pages4
JournalOptical Materials
Issue number1-2
StatePublished - Jun 2001
EventOptoelectronics I: Materials and Technologies for Optoelectronic Devices - Strasbourg, France
Duration: May 30 2000Jun 2 2000


  • GaAs
  • HVPE
  • Selective epitaxy
  • Wulff construction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering


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