Abstract
A microscopic laser model was validated on the basis of the quantum kinetic equations using the experimentally determined gain, threshold current, quasi-Fermi level separation data and spontaneous emission taken on GaInP/AlGaInP lasers. By comparing calculated and experimental optical properties, a significant contribution to the threshold current was found from the non-radiative recombination within the quantum wells. A graph of calculated absorption spectra as a function of carrier density was also plotted.
Original language | English (US) |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Editors | Y. Arakawa, P. Blood, M. Osinski |
Pages | 203-214 |
Number of pages | 12 |
Volume | 4283 |
DOIs | |
State | Published - 2001 |
Event | Physics and Simulation of Optoelectronic Devices IX - San Jose, CA, United States Duration: Jan 22 2001 → Jan 26 2001 |
Other
Other | Physics and Simulation of Optoelectronic Devices IX |
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Country/Territory | United States |
City | San Jose, CA |
Period | 1/22/01 → 1/26/01 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics