CMOS integrated radio frequency dome resonator

Wenzhe Zhou, Joshua D. Cross, Maxim Zalalutdinov, Bojan Ilic, Jeffrey W. Baldwin, Brain H. Houston, Harold G. Craighead, Jeevak M. Parpia

Research output: Contribution to journalArticle

Abstract

Resonant RF MEMS structures can offer excellent performance for integrated sensing and RF signal processing applications. MEMS devices offer small size and low power consumption and improved physical parameters such as FQ product; however, significant impediments to a large scale commercial adoption include: production cost, difficulty of implementation and signal transduction. In this paper, we developed a generic pathway for CMOS-MEMS integration by designing MEMS dome resonators in multiple layers of stacked polycrystalline silicon in standard CMOS back end of line process and demonstrate the quality factor of dome resonator both optically and electrically. In this work, we report the highest FQ product of integrated resonator at micron level using commercial CMOS technology and the lowest operation power.

Original languageEnglish (US)
Pages (from-to)1220-1222
Number of pages3
JournalMicroelectronic Engineering
Volume87
Issue number5-8
DOIs
StatePublished - May 1 2010

Keywords

  • CMOS-MEMS integration
  • High Q
  • MEMS resonator
  • Radio frequency

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'CMOS integrated radio frequency dome resonator'. Together they form a unique fingerprint.

Cite this