Charge induced pattern distortion in low energy electron beam lithography

K. M. Satyalakshmi, A. Olkhovets, M. G. Metzler, C. K. Harnett, D. M. Tanenbaum, H. G. Craighead

Research output: Contribution to journalConference article

26 Scopus citations

Abstract

Charge-induced pattern distortions in low voltage electron beam lithography were investigated. Pattern distortion on conducting substrates was found to be small. Pattern placement errors and pattern distortions were observed in the case of electrically insulating substrates. Pattern distortions were found to be influenced by the incident electron energy, pattern size and electrical conductivity. The electron beam deflection is directly proportional to trapped surface charge density.

Original languageEnglish (US)
Pages (from-to)3122-3125
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number6
DOIs
StatePublished - Nov 2000
Event44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Rancho Mirage, CA, USA
Duration: May 30 2000Jun 2 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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