Cathodoluminescence and photoluminescence analysis of InxGa 1-xAs/GaAs quantum well structures

S. Evoy; G. F. Redinbo; H. G. Craighead

Cathodoluminescence and photoluminescence analysis of In_xGa _1-xAs/GaAs quantum well structures

S. Evoy, G. F. Redinbo, H. G. Craighead

Houston Methodist

Research output: Contribution to journal › Article › peer-review

Abstract

Cathodoluminescence (CL) and continuous wave photoluminescence (cw-PL) were used to study carrier recombination in the In_xGa_1-xAs/ GaAs system for x=0.1 and x=0.2. Ambipolar diffusion length values of L _D=0.9±0.1 μm and of L_D=0.5±0.1 μm are measured for x=0.1 and x=0.2, respectively, at 16 K. The CL analysis of dry-etched structures reveals a surface recombination velocity of S=10 ⁷ cm/s for both material systems. A similar cw-PL study shows a dependence on laser excitation density, suggesting the saturation of sidewall traps when higher excitation densities are involved.

Original language	English (US)
Pages (from-to)	1259
Number of pages	1
Journal	Applied Physics Letters
State	Published - 1995

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

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title = "Cathodoluminescence and photoluminescence analysis of InxGa 1-xAs/GaAs quantum well structures",

abstract = "Cathodoluminescence (CL) and continuous wave photoluminescence (cw-PL) were used to study carrier recombination in the InxGa1-xAs/ GaAs system for x=0.1 and x=0.2. Ambipolar diffusion length values of L D=0.9±0.1 μm and of LD=0.5±0.1 μm are measured for x=0.1 and x=0.2, respectively, at 16 K. The CL analysis of dry-etched structures reveals a surface recombination velocity of S=10 7 cm/s for both material systems. A similar cw-PL study shows a dependence on laser excitation density, suggesting the saturation of sidewall traps when higher excitation densities are involved.",

author = "S. Evoy and Redinbo, \{G. F.\} and Craighead, \{H. G.\}",

year = "1995",

language = "English (US)",

pages = "1259",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Cathodoluminescence and photoluminescence analysis of InxGa 1-xAs/GaAs quantum well structures

AU - Evoy, S.

AU - Redinbo, G. F.

AU - Craighead, H. G.

PY - 1995

Y1 - 1995

N2 - Cathodoluminescence (CL) and continuous wave photoluminescence (cw-PL) were used to study carrier recombination in the InxGa1-xAs/ GaAs system for x=0.1 and x=0.2. Ambipolar diffusion length values of L D=0.9±0.1 μm and of LD=0.5±0.1 μm are measured for x=0.1 and x=0.2, respectively, at 16 K. The CL analysis of dry-etched structures reveals a surface recombination velocity of S=10 7 cm/s for both material systems. A similar cw-PL study shows a dependence on laser excitation density, suggesting the saturation of sidewall traps when higher excitation densities are involved.

AB - Cathodoluminescence (CL) and continuous wave photoluminescence (cw-PL) were used to study carrier recombination in the InxGa1-xAs/ GaAs system for x=0.1 and x=0.2. Ambipolar diffusion length values of L D=0.9±0.1 μm and of LD=0.5±0.1 μm are measured for x=0.1 and x=0.2, respectively, at 16 K. The CL analysis of dry-etched structures reveals a surface recombination velocity of S=10 7 cm/s for both material systems. A similar cw-PL study shows a dependence on laser excitation density, suggesting the saturation of sidewall traps when higher excitation densities are involved.

UR - https://www.scopus.com/pages/publications/36449007086

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M3 - Article

AN - SCOPUS:36449007086

SN - 0003-6951

SP - 1259

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Cathodoluminescence and photoluminescence analysis of In_xGa _1-xAs/GaAs quantum well structures

Abstract

ASJC Scopus subject areas

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