Cathodoluminescence and photoluminescence analysis of InxGa 1-xAs/GaAs quantum well structures

S. Evoy, G. F. Redinbo, Harold G. Craighead

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Cathodoluminescence (CL) and continuous wave photoluminescence (cw-PL) were used to study carrier recombination in the InxGa1-xAs/ GaAs system for x=0.1 and x=0.2. Ambipolar diffusion length values of L D=0.9±0.1 μm and of LD=0.5±0.1 μm are measured for x=0.1 and x=0.2, respectively, at 16 K. The CL analysis of dry-etched structures reveals a surface recombination velocity of S=10 7 cm/s for both material systems. A similar cw-PL study shows a dependence on laser excitation density, suggesting the saturation of sidewall traps when higher excitation densities are involved.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
StatePublished - Dec 1 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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