Carrier injection-level dependence of lateral ambipolar diffusion in S-K quantum-dot lasers

D. Naidu, P. M. Smowton, H. D. Summers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A strong variation in the lateral ambipolar diffusion length (L d) with injection-level in quantum-dot lasers results in two regimes of low Ld. Only one of these should be used for efficient laser operation.

Original languageEnglish (US)
Title of host publication2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010
Pages67-68
Number of pages2
DOIs
StatePublished - Dec 1 2010
Event2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010 - Kyoto, Japan
Duration: Sep 26 2010Sep 30 2010

Other

Other2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010
CountryJapan
CityKyoto
Period9/26/109/30/10

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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