Carrier injection-level dependence of lateral ambipolar diffusion in S-K quantum-dot lasers

D. Naidu; P. M. Smowton; H. D. Summers

doi:10.1109/ISLC.2010.5642750

Carrier injection-level dependence of lateral ambipolar diffusion in S-K quantum-dot lasers

D. Naidu, P. M. Smowton, H. D. Summers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A strong variation in the lateral ambipolar diffusion length (L _d) with injection-level in quantum-dot lasers results in two regimes of low L_d. Only one of these should be used for efficient laser operation.

Original language	English (US)
Title of host publication	2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010
Pages	67-68
Number of pages	2
DOIs	https://doi.org/10.1109/ISLC.2010.5642750
State	Published - Dec 1 2010
Event	2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010 - Kyoto, Japan Duration: Sep 26 2010 → Sep 30 2010

Other

Other	2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010
Country/Territory	Japan
City	Kyoto
Period	9/26/10 → 9/30/10

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/ISLC.2010.5642750

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title = "Carrier injection-level dependence of lateral ambipolar diffusion in S-K quantum-dot lasers",

abstract = "A strong variation in the lateral ambipolar diffusion length (L d) with injection-level in quantum-dot lasers results in two regimes of low Ld. Only one of these should be used for efficient laser operation.",

author = "D. Naidu and Smowton, {P. M.} and Summers, {H. D.}",

year = "2010",

month = dec,

day = "1",

doi = "10.1109/ISLC.2010.5642750",

language = "English (US)",

isbn = "9781424456833",

pages = "67--68",

booktitle = "2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010",

note = "2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010 ; Conference date: 26-09-2010 Through 30-09-2010",

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AU - Naidu, D.

AU - Smowton, P. M.

AU - Summers, H. D.

PY - 2010/12/1

Y1 - 2010/12/1

N2 - A strong variation in the lateral ambipolar diffusion length (L d) with injection-level in quantum-dot lasers results in two regimes of low Ld. Only one of these should be used for efficient laser operation.

AB - A strong variation in the lateral ambipolar diffusion length (L d) with injection-level in quantum-dot lasers results in two regimes of low Ld. Only one of these should be used for efficient laser operation.

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U2 - 10.1109/ISLC.2010.5642750

DO - 10.1109/ISLC.2010.5642750

M3 - Conference contribution

AN - SCOPUS:78651068863

SN - 9781424456833

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EP - 68

BT - 2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010

T2 - 2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010

Y2 - 26 September 2010 through 30 September 2010

ER -

Carrier injection-level dependence of lateral ambipolar diffusion in S-K quantum-dot lasers

Abstract

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