Carrier distribution, spontaneous emission and gain in self assembled quantum dot lasers

Peter M. Smowton; Emma J. Pearce; Julie Lutti; Dan R. Matthews; Huw D. Summers; Gareth M. Lewis; Peter Blood; Mark Hopkinson; Andrey Krysa

doi:10.1117/12.530429

Carrier distribution, spontaneous emission and gain in self assembled quantum dot lasers

Peter M. Smowton, Emma J. Pearce, Julie Lutti, Dan R. Matthews, Huw D. Summers, Gareth M. Lewis, Peter Blood, Mark Hopkinson, Andrey Krysa

Houston Methodist

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

We examine the mechanisms that lead to a low value of saturated modal gain in both 1μm emitting InGaAs based and ≈ 700nm emitting InP/GalnP quantum dot laser systems. We explain the observation that the value of the saturated modal gain increases as the temperature decreases using a simple model of the filling of the available dot and wetting layer states according to a Fermi-Dirac distribution. We show that it is the relatively large number of available wetting layer valence states and their proximity in energy to the dot states that limits the modal gain. We measure the population inversion factor for samples containing different numbers of layers of dots and for samples where the dots are grown in a quantum well (DWELL) and for dots grown in bulk layers of either GaAs or Al _0.15Ga _0.85As (non-DWELL). Comparison of this data with that calculated for a Fermi-Dirac distribution of carriers in the available states demonstrates that for most of the samples the carriers in the ground states of the quantum dots are not in thermal equilibrium with those in higher lying energy states - the excited states or wetting layer.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	C.F. Gmachl, D.P. Bour
Pages	86-95
Number of pages	10
Volume	5365
DOIs	https://doi.org/10.1117/12.530429
State	Published - 2004
Event	Novel In-Plane Semiconductor Lasers III - San Jose, CA, United States Duration: Jan 26 2004 → Jan 28 2004

Other

Other	Novel In-Plane Semiconductor Lasers III
Country/Territory	United States
City	San Jose, CA
Period	1/26/04 → 1/28/04

Keywords

Gain saturation
Laser diodes
Quantum dots

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Access to Document

10.1117/12.530429

Cite this

Smowton, P. M., Pearce, E. J., Lutti, J., Matthews, D. R., Summers, H. D., Lewis, G. M., Blood, P., Hopkinson, M., & Krysa, A. (2004). Carrier distribution, spontaneous emission and gain in self assembled quantum dot lasers. In C. F. Gmachl, & D. P. Bour (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5365, pp. 86-95) https://doi.org/10.1117/12.530429

Smowton, PM, Pearce, EJ, Lutti, J, Matthews, DR, Summers, HD, Lewis, GM, Blood, P, Hopkinson, M & Krysa, A 2004, Carrier distribution, spontaneous emission and gain in self assembled quantum dot lasers. in CF Gmachl & DP Bour (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 5365, pp. 86-95, Novel In-Plane Semiconductor Lasers III, San Jose, CA, United States, 1/26/04. https://doi.org/10.1117/12.530429

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title = "Carrier distribution, spontaneous emission and gain in self assembled quantum dot lasers",

abstract = "We examine the mechanisms that lead to a low value of saturated modal gain in both 1μm emitting InGaAs based and ≈ 700nm emitting InP/GalnP quantum dot laser systems. We explain the observation that the value of the saturated modal gain increases as the temperature decreases using a simple model of the filling of the available dot and wetting layer states according to a Fermi-Dirac distribution. We show that it is the relatively large number of available wetting layer valence states and their proximity in energy to the dot states that limits the modal gain. We measure the population inversion factor for samples containing different numbers of layers of dots and for samples where the dots are grown in a quantum well (DWELL) and for dots grown in bulk layers of either GaAs or Al 0.15Ga 0.85As (non-DWELL). Comparison of this data with that calculated for a Fermi-Dirac distribution of carriers in the available states demonstrates that for most of the samples the carriers in the ground states of the quantum dots are not in thermal equilibrium with those in higher lying energy states - the excited states or wetting layer. ",

keywords = "Gain saturation, Laser diodes, Quantum dots",

author = "Smowton, {Peter M.} and Pearce, {Emma J.} and Julie Lutti and Matthews, {Dan R.} and Summers, {Huw D.} and Lewis, {Gareth M.} and Peter Blood and Mark Hopkinson and Andrey Krysa",

year = "2004",

doi = "10.1117/12.530429",

language = "English (US)",

volume = "5365",

pages = "86--95",

editor = "C.F. Gmachl and D.P. Bour",

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AU - Smowton, Peter M.

AU - Pearce, Emma J.

AU - Lutti, Julie

AU - Matthews, Dan R.

AU - Summers, Huw D.

AU - Lewis, Gareth M.

AU - Blood, Peter

AU - Hopkinson, Mark

AU - Krysa, Andrey

PY - 2004

Y1 - 2004

N2 - We examine the mechanisms that lead to a low value of saturated modal gain in both 1μm emitting InGaAs based and ≈ 700nm emitting InP/GalnP quantum dot laser systems. We explain the observation that the value of the saturated modal gain increases as the temperature decreases using a simple model of the filling of the available dot and wetting layer states according to a Fermi-Dirac distribution. We show that it is the relatively large number of available wetting layer valence states and their proximity in energy to the dot states that limits the modal gain. We measure the population inversion factor for samples containing different numbers of layers of dots and for samples where the dots are grown in a quantum well (DWELL) and for dots grown in bulk layers of either GaAs or Al 0.15Ga 0.85As (non-DWELL). Comparison of this data with that calculated for a Fermi-Dirac distribution of carriers in the available states demonstrates that for most of the samples the carriers in the ground states of the quantum dots are not in thermal equilibrium with those in higher lying energy states - the excited states or wetting layer.

AB - We examine the mechanisms that lead to a low value of saturated modal gain in both 1μm emitting InGaAs based and ≈ 700nm emitting InP/GalnP quantum dot laser systems. We explain the observation that the value of the saturated modal gain increases as the temperature decreases using a simple model of the filling of the available dot and wetting layer states according to a Fermi-Dirac distribution. We show that it is the relatively large number of available wetting layer valence states and their proximity in energy to the dot states that limits the modal gain. We measure the population inversion factor for samples containing different numbers of layers of dots and for samples where the dots are grown in a quantum well (DWELL) and for dots grown in bulk layers of either GaAs or Al 0.15Ga 0.85As (non-DWELL). Comparison of this data with that calculated for a Fermi-Dirac distribution of carriers in the available states demonstrates that for most of the samples the carriers in the ground states of the quantum dots are not in thermal equilibrium with those in higher lying energy states - the excited states or wetting layer.

KW - Gain saturation

KW - Laser diodes

KW - Quantum dots

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Carrier distribution, spontaneous emission and gain in self assembled quantum dot lasers

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