Carrier-carrier scattering effects in InGaAs-GaAs strained layer lasers

The authors have calculated the gain-current characteristics of a 70 A In_0.2Ga_0.8As-GaAs strained layer quantum well laser assuming strict k-selection and including spectral broadening due to carrier-carrier interactions at high carrier densities. The broadening lifetime, which is dependent upon energy and carrier density, has been calculated from first principles using an intraband Auger-type process. The effect of both electron-electron and hole-hole scattering has been included in the calculation of this lifetime. The paper compares the effect on the gain-current characteristics of the energy dependent lifetime and of a constant lifetime of 10^MIN13 s used typically in other calculations.