Carrier-carrier scattering effects in InGaAs-GaAs strained layer lasers

P. Rees; R. A H Hamilon; P. Blood; S. V. Burke

doi:10.1049/ip-j.1993.0015

Carrier-carrier scattering effects in InGaAs-GaAs strained layer lasers

P. Rees, R. A H Hamilon, P. Blood, S. V. Burke

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The authors have calculated the gain-current characteristics of a 70 A In_0.2Ga_0.8As-GaAs strained layer quantum well laser assuming strict k-selection and including spectral broadening due to carrier-carrier interactions at high carrier densities. The broadening lifetime, which is dependent upon energy and carrier density, has been calculated from first principles using an intraband Auger-type process. The effect of both electron-electron and hole-hole scattering has been included in the calculation of this lifetime. The paper compares the effect on the gain-current characteristics of the energy dependent lifetime and of a constant lifetime of 10^MIN13 s used typically in other calculations.

Original language	English (US)
Pages (from-to)	81-84
Number of pages	4
Journal	IEE proceedings. Part J, Optoelectronics
Volume	140
Issue number	1
DOIs	https://doi.org/10.1049/ip-j.1993.0015
State	Published - 1993

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Engineering(all)

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abstract = "The authors have calculated the gain-current characteristics of a 70 A In0.2Ga0.8As-GaAs strained layer quantum well laser assuming strict k-selection and including spectral broadening due to carrier-carrier interactions at high carrier densities. The broadening lifetime, which is dependent upon energy and carrier density, has been calculated from first principles using an intraband Auger-type process. The effect of both electron-electron and hole-hole scattering has been included in the calculation of this lifetime. The paper compares the effect on the gain-current characteristics of the energy dependent lifetime and of a constant lifetime of 10MIN13 s used typically in other calculations.",

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year = "1993",

doi = "10.1049/ip-j.1993.0015",

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T1 - Carrier-carrier scattering effects in InGaAs-GaAs strained layer lasers

AU - Rees, P.

AU - Hamilon, R. A H

AU - Blood, P.

AU - Burke, S. V.

PY - 1993

Y1 - 1993

N2 - The authors have calculated the gain-current characteristics of a 70 A In0.2Ga0.8As-GaAs strained layer quantum well laser assuming strict k-selection and including spectral broadening due to carrier-carrier interactions at high carrier densities. The broadening lifetime, which is dependent upon energy and carrier density, has been calculated from first principles using an intraband Auger-type process. The effect of both electron-electron and hole-hole scattering has been included in the calculation of this lifetime. The paper compares the effect on the gain-current characteristics of the energy dependent lifetime and of a constant lifetime of 10MIN13 s used typically in other calculations.

AB - The authors have calculated the gain-current characteristics of a 70 A In0.2Ga0.8As-GaAs strained layer quantum well laser assuming strict k-selection and including spectral broadening due to carrier-carrier interactions at high carrier densities. The broadening lifetime, which is dependent upon energy and carrier density, has been calculated from first principles using an intraband Auger-type process. The effect of both electron-electron and hole-hole scattering has been included in the calculation of this lifetime. The paper compares the effect on the gain-current characteristics of the energy dependent lifetime and of a constant lifetime of 10MIN13 s used typically in other calculations.

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EP - 84

JO - IEE proceedings. Part J, Optoelectronics

JF - IEE proceedings. Part J, Optoelectronics

SN - 0267-3932

IS - 1

ER -

Carrier-carrier scattering effects in InGaAs-GaAs strained layer lasers

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