Carrier-carrier scattering effects in InGaAs-GaAs strained layer lasers

P. Rees, R. A H Hamilon, P. Blood, S. V. Burke

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

The authors have calculated the gain-current characteristics of a 70 A In0.2Ga0.8As-GaAs strained layer quantum well laser assuming strict k-selection and including spectral broadening due to carrier-carrier interactions at high carrier densities. The broadening lifetime, which is dependent upon energy and carrier density, has been calculated from first principles using an intraband Auger-type process. The effect of both electron-electron and hole-hole scattering has been included in the calculation of this lifetime. The paper compares the effect on the gain-current characteristics of the energy dependent lifetime and of a constant lifetime of 10MIN13 s used typically in other calculations.

Original languageEnglish (US)
Pages (from-to)81-84
Number of pages4
JournalIEE proceedings. Part J, Optoelectronics
Volume140
Issue number1
DOIs
StatePublished - 1993

ASJC Scopus subject areas

  • Engineering(all)

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