Abstract
The authors have calculated the gain-current characteristics of a 70 A In0.2Ga0.8As-GaAs strained layer quantum well laser assuming strict k-selection and including spectral broadening due to carrier-carrier interactions at high carrier densities. The broadening lifetime, which is dependent upon energy and carrier density, has been calculated from first principles using an intraband Auger-type process. The effect of both electron-electron and hole-hole scattering has been included in the calculation of this lifetime. The paper compares the effect on the gain-current characteristics of the energy dependent lifetime and of a constant lifetime of 10MIN13 s used typically in other calculations.
Original language | English (US) |
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Pages (from-to) | 81-84 |
Number of pages | 4 |
Journal | IEE proceedings. Part J, Optoelectronics |
Volume | 140 |
Issue number | 1 |
DOIs | |
State | Published - 1993 |
ASJC Scopus subject areas
- General Engineering