Calculation of Differential Gain and Linewidth Enhancement Factor in 980-nm InGaAs Vertical Cavity Surface-Emitting Lasers

H. D. Summers; P. Dowd; I. H. White; M. R.T. Tan

doi:10.1109/68.393190

Calculation of Differential Gain and Linewidth Enhancement Factor in 980-nm InGaAs Vertical Cavity Surface-Emitting Lasers

H. D. Summers, P. Dowd, I. H. White, M. R.T. Tan

Houston Methodist

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

The optimization of differential gain and linewidth enhancement factor within VCSEL's is required to achieve improved performance under dynamic conditions. In this paper, the differential gain and linewidth enhancement factor in an InGaAs-GaAs VCSEL have been calculated over a range of carrier densities and at various wavelengths across the gain spectrum. The results show the importance of low threshold gain values in achieving high differential gain/low linewidth enhancement factor. By temperature tuning the lasing wavelength to shorter wavelengths than the gain peak, values of α_H as low as 0.6 can be achieved.

Original language	English (US)
Pages (from-to)	736-738
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	7
Issue number	7
DOIs	https://doi.org/10.1109/68.393190
State	Published - Jul 1995

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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title = "Calculation of Differential Gain and Linewidth Enhancement Factor in 980-nm InGaAs Vertical Cavity Surface-Emitting Lasers",

abstract = "The optimization of differential gain and linewidth enhancement factor within VCSEL's is required to achieve improved performance under dynamic conditions. In this paper, the differential gain and linewidth enhancement factor in an InGaAs-GaAs VCSEL have been calculated over a range of carrier densities and at various wavelengths across the gain spectrum. The results show the importance of low threshold gain values in achieving high differential gain/low linewidth enhancement factor. By temperature tuning the lasing wavelength to shorter wavelengths than the gain peak, values of αH as low as 0.6 can be achieved.",

author = "Summers, {H. D.} and P. Dowd and White, {I. H.} and Tan, {M. R.T.}",

note = "Funding Information: Manuscript received February 15, 1995; revised March 7, 1995. This work was supported by the Engineering and Physical Sciences Research Council, UK. H. D. Summers, P. Dowd, and I. H. White are with the School of Physics, University of Bath, Claverton Down, Bath, BA2 7AY, UK. M. R. T. Tan is with Hewlett Packard Laboratories, Palo Alto, CA 94303 USA. IEEE Log Number 941 1723. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.",

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AU - Tan, M. R.T.

N1 - Funding Information: Manuscript received February 15, 1995; revised March 7, 1995. This work was supported by the Engineering and Physical Sciences Research Council, UK. H. D. Summers, P. Dowd, and I. H. White are with the School of Physics, University of Bath, Claverton Down, Bath, BA2 7AY, UK. M. R. T. Tan is with Hewlett Packard Laboratories, Palo Alto, CA 94303 USA. IEEE Log Number 941 1723. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.

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N2 - The optimization of differential gain and linewidth enhancement factor within VCSEL's is required to achieve improved performance under dynamic conditions. In this paper, the differential gain and linewidth enhancement factor in an InGaAs-GaAs VCSEL have been calculated over a range of carrier densities and at various wavelengths across the gain spectrum. The results show the importance of low threshold gain values in achieving high differential gain/low linewidth enhancement factor. By temperature tuning the lasing wavelength to shorter wavelengths than the gain peak, values of αH as low as 0.6 can be achieved.

AB - The optimization of differential gain and linewidth enhancement factor within VCSEL's is required to achieve improved performance under dynamic conditions. In this paper, the differential gain and linewidth enhancement factor in an InGaAs-GaAs VCSEL have been calculated over a range of carrier densities and at various wavelengths across the gain spectrum. The results show the importance of low threshold gain values in achieving high differential gain/low linewidth enhancement factor. By temperature tuning the lasing wavelength to shorter wavelengths than the gain peak, values of αH as low as 0.6 can be achieved.

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Calculation of Differential Gain and Linewidth Enhancement Factor in 980-nm InGaAs Vertical Cavity Surface-Emitting Lasers

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