Calculated threshold currents of nitride- and phosphide-based quantum-well lasers

P. Rees, C. Cooper, P. M. Smowton, P. Blood, J. Hegarty

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


We have calculated the room temperature gain-current characteristics for a 360 nm wavelength, 80 Å GaN- Al0.14Ga0.86N and a red-emitting, 80 Å Ga0.51In0.49P-(Al0.44Ga0.56) 0.51In0.49P quantum well laser structures, including many body effects. Although the carrier density and spontaneous current are much higher (by a factor of 4 and 3, respectively) in the nitride structures for a given local gain, the higher confinement factor at short wavelengths means the intrinsic threshold current of these devices is predicted to be approximately twice that of red lasers with the same optical loss.

Original languageEnglish (US)
Pages (from-to)197-199
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number2
StatePublished - Feb 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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