Calculated threshold currents of nitride- and phosphide-based quantum-well lasers

P. Rees; C. Cooper; P. M. Smowton; P. Blood; J. Hegarty

doi:10.1109/68.484239

Calculated threshold currents of nitride- and phosphide-based quantum-well lasers

P. Rees, C. Cooper, P. M. Smowton, P. Blood, J. Hegarty

Houston Methodist

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We have calculated the room temperature gain-current characteristics for a 360 nm wavelength, 80 Å GaN- Al_0.14Ga_0.86N and a red-emitting, 80 Å Ga_0.51In_0.49P-(Al_0.44Ga_0.56) _0.51In_0.49P quantum well laser structures, including many body effects. Although the carrier density and spontaneous current are much higher (by a factor of 4 and 3, respectively) in the nitride structures for a given local gain, the higher confinement factor at short wavelengths means the intrinsic threshold current of these devices is predicted to be approximately twice that of red lasers with the same optical loss.

Original language	English (US)
Pages (from-to)	197-199
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	8
Issue number	2
DOIs	https://doi.org/10.1109/68.484239
State	Published - Feb 1996

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.484239

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@article{71d9165b5b464860b94be6e38e30a2b1,

title = "Calculated threshold currents of nitride- and phosphide-based quantum-well lasers",

abstract = "We have calculated the room temperature gain-current characteristics for a 360 nm wavelength, 80 {\AA} GaN- Al0.14Ga0.86N and a red-emitting, 80 {\AA} Ga0.51In0.49P-(Al0.44Ga0.56) 0.51In0.49P quantum well laser structures, including many body effects. Although the carrier density and spontaneous current are much higher (by a factor of 4 and 3, respectively) in the nitride structures for a given local gain, the higher confinement factor at short wavelengths means the intrinsic threshold current of these devices is predicted to be approximately twice that of red lasers with the same optical loss.",

author = "P. Rees and C. Cooper and Smowton, {P. M.} and P. Blood and J. Hegarty",

note = "Funding Information: Manuscript received July 18, 1995; revised October 27, 1995. P. R e s was supported in part by the EC under the Human Capital Mobility research training program. C. Cooper and P. M. Smowton were supported in part by the EPSRC. P. Rees and J. Hegarty are with the Physics Department, Trinity College, Dublin 2, Ireland. C. Cooper, P. M. Smowton, and P. Blood are with the Department of Physics and Astronomy, University of Wales Cardiff, P.O. Box 913, Cardiff CF2 3YB, UK. Publisher Item Identifier S 1041-1135(96)01259-1.",

year = "1996",

month = feb,

doi = "10.1109/68.484239",

language = "English (US)",

volume = "8",

pages = "197--199",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Calculated threshold currents of nitride- and phosphide-based quantum-well lasers

AU - Rees, P.

AU - Cooper, C.

AU - Smowton, P. M.

AU - Blood, P.

AU - Hegarty, J.

N1 - Funding Information: Manuscript received July 18, 1995; revised October 27, 1995. P. R e s was supported in part by the EC under the Human Capital Mobility research training program. C. Cooper and P. M. Smowton were supported in part by the EPSRC. P. Rees and J. Hegarty are with the Physics Department, Trinity College, Dublin 2, Ireland. C. Cooper, P. M. Smowton, and P. Blood are with the Department of Physics and Astronomy, University of Wales Cardiff, P.O. Box 913, Cardiff CF2 3YB, UK. Publisher Item Identifier S 1041-1135(96)01259-1.

PY - 1996/2

Y1 - 1996/2

N2 - We have calculated the room temperature gain-current characteristics for a 360 nm wavelength, 80 Å GaN- Al0.14Ga0.86N and a red-emitting, 80 Å Ga0.51In0.49P-(Al0.44Ga0.56) 0.51In0.49P quantum well laser structures, including many body effects. Although the carrier density and spontaneous current are much higher (by a factor of 4 and 3, respectively) in the nitride structures for a given local gain, the higher confinement factor at short wavelengths means the intrinsic threshold current of these devices is predicted to be approximately twice that of red lasers with the same optical loss.

AB - We have calculated the room temperature gain-current characteristics for a 360 nm wavelength, 80 Å GaN- Al0.14Ga0.86N and a red-emitting, 80 Å Ga0.51In0.49P-(Al0.44Ga0.56) 0.51In0.49P quantum well laser structures, including many body effects. Although the carrier density and spontaneous current are much higher (by a factor of 4 and 3, respectively) in the nitride structures for a given local gain, the higher confinement factor at short wavelengths means the intrinsic threshold current of these devices is predicted to be approximately twice that of red lasers with the same optical loss.

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JO - IEEE Photonics Technology Letters

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ER -

Calculated threshold currents of nitride- and phosphide-based quantum-well lasers

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