Abstract
4- and 8-level diffractive optical elements (DOEs) are fabricated in silicon using electron beam lithography and reactive ion etching (RIE). An f/1.9, 1mm diameter, 4-phase-level, reflective, off-axis, imaging DOE is fabricated for use in a free-space optical interconnect. The absolute first order efficiency of the DOE is 73%. 8-level linear gratings are fabricated to determine processing tolerances for DOEs with first order diffraction efficiencies greater than 90%.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 189-197 |
| Number of pages | 9 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 2216 |
| DOIs | |
| State | Published - Jun 3 1994 |
| Event | Photonics at the Air Force Photonics Center 1994 - Orlando, United States Duration: Apr 4 1994 → Apr 8 1994 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
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