Ballistic electron emission microscopy studies of electron scattering in Au/GaAs Schottky diodes damaged by focused ion beam implantation

J. W. McNabb, H. G. Craighead

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Ballistic electron emission microscopy is used to investigate the electron scattering properties of undamaged and focused ion beam implanted Au/GaAs diodes. Implanted regions show decreased ballistic electron transmission attributed to increased scattering. A quantitative model of electron transport is developed that includes quantum mechanical transmission at the interface, scattering effects from optical phonons and implantation induced defects in the semiconductor, and scattering in the metal layer. Model predictions of scattering in undamaged regions show good agreement with the data. However, we conclude additional scattering effects must be included to describe the implanted structures.

Original languageEnglish (US)
Pages (from-to)617-622
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume14
Issue number2
DOIs
StatePublished - 1996

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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