Ballistic electron emission microscopy of laterally patterned microstructures

A. Davies, J. G. Couillard, Harold G. Craighead

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

Ballistic electron emission microscopy (BEEM) has been used to investigate and image microfabricated Au/SiGe features. Electron beam lithography and dry etching were used to construct arrays of holes in a SiO2 layer and etched indentations in SiGe. The electronic transport properties of the fabricated structure and adjacent unpatterned region were then characterized and imaged with BEEM. These studies demonstrate that BEEM is capable of resolving transport variation with 1-2 nm spatial resolution and can be used to study the microscopic effects of reactive ion etching. The types of imaging contrast and subsurface electron transport information obtainable from BEEM cannot be obtained by other scanned beam or scanned probe techniques.

Original languageEnglish (US)
Pages (from-to)1040-1042
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number9
DOIs
StatePublished - Dec 1 1992

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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