Ballistic electron emission microscopy of laterally patterned microstructures

A. Davies; J. G. Couillard; H. G. Craighead

doi:10.1063/1.107709

Ballistic electron emission microscopy of laterally patterned microstructures

A. Davies, J. G. Couillard, H. G. Craighead

Houston Methodist

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Ballistic electron emission microscopy (BEEM) has been used to investigate and image microfabricated Au/SiGe features. Electron beam lithography and dry etching were used to construct arrays of holes in a SiO₂ layer and etched indentations in SiGe. The electronic transport properties of the fabricated structure and adjacent unpatterned region were then characterized and imaged with BEEM. These studies demonstrate that BEEM is capable of resolving transport variation with 1-2 nm spatial resolution and can be used to study the microscopic effects of reactive ion etching. The types of imaging contrast and subsurface electron transport information obtainable from BEEM cannot be obtained by other scanned beam or scanned probe techniques.

Original language	English (US)
Pages (from-to)	1040-1042
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	9
DOIs	https://doi.org/10.1063/1.107709
State	Published - 1992

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.107709

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title = "Ballistic electron emission microscopy of laterally patterned microstructures",

abstract = "Ballistic electron emission microscopy (BEEM) has been used to investigate and image microfabricated Au/SiGe features. Electron beam lithography and dry etching were used to construct arrays of holes in a SiO2 layer and etched indentations in SiGe. The electronic transport properties of the fabricated structure and adjacent unpatterned region were then characterized and imaged with BEEM. These studies demonstrate that BEEM is capable of resolving transport variation with 1-2 nm spatial resolution and can be used to study the microscopic effects of reactive ion etching. The types of imaging contrast and subsurface electron transport information obtainable from BEEM cannot be obtained by other scanned beam or scanned probe techniques.",

author = "A. Davies and Couillard, {J. G.} and Craighead, {H. G.}",

year = "1992",

doi = "10.1063/1.107709",

language = "English (US)",

volume = "61",

pages = "1040--1042",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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AU - Davies, A.

AU - Couillard, J. G.

AU - Craighead, H. G.

PY - 1992

Y1 - 1992

N2 - Ballistic electron emission microscopy (BEEM) has been used to investigate and image microfabricated Au/SiGe features. Electron beam lithography and dry etching were used to construct arrays of holes in a SiO2 layer and etched indentations in SiGe. The electronic transport properties of the fabricated structure and adjacent unpatterned region were then characterized and imaged with BEEM. These studies demonstrate that BEEM is capable of resolving transport variation with 1-2 nm spatial resolution and can be used to study the microscopic effects of reactive ion etching. The types of imaging contrast and subsurface electron transport information obtainable from BEEM cannot be obtained by other scanned beam or scanned probe techniques.

AB - Ballistic electron emission microscopy (BEEM) has been used to investigate and image microfabricated Au/SiGe features. Electron beam lithography and dry etching were used to construct arrays of holes in a SiO2 layer and etched indentations in SiGe. The electronic transport properties of the fabricated structure and adjacent unpatterned region were then characterized and imaged with BEEM. These studies demonstrate that BEEM is capable of resolving transport variation with 1-2 nm spatial resolution and can be used to study the microscopic effects of reactive ion etching. The types of imaging contrast and subsurface electron transport information obtainable from BEEM cannot be obtained by other scanned beam or scanned probe techniques.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Ballistic electron emission microscopy of laterally patterned microstructures

Abstract

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