Ballistic-electron-emission microscopy characteristics of reverse-biased Schottky diodes

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Abstract

Ballistic-electron-emission microscopy (BEEM) is used to study Au/Si Schottky diodes under reverse-bias conditions. The reverse bias causes a reduction in the barrier height and an increase in the collection efficiency of the electron transport. The former phenomenon is well described by the effects of the image potential. The increase in collection efficiency is likely due to a reduction in the percentage of backscattered electrons as the field strength in the semiconductor is increased. The analysis further indicates that this back scattering is a significant energy dependent process that is absent from the accepted BEEM transport model.

Original languageEnglish (US)
Pages (from-to)2833-2835
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number21
DOIs
StatePublished - Dec 1 1994

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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