APPLICATION OF POLY(ALKENYLSILANE SULFONE)S AS POSITIVE ELECTRON BEAM RESISTS FOR TWO-LAYER SYSTEMS.

Antoni S. Gozdz; Harold G. Craighead; Murrae J. Bowden

APPLICATION OF POLY(ALKENYLSILANE SULFONE)S AS POSITIVE ELECTRON BEAM RESISTS FOR TWO-LAYER SYSTEMS.

Antoni S. Gozdz, Harold G. Craighead, Murrae J. Bowden

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Alternating copolymers of sulfur dioxide and vinyltrimethylsilane (VTMS) and terpolymers with allyltrimethylsilane (ATMS) and 1-butene have been synthesized by low-temperature, free radical-initiated polymerization. The copolymers with VTMS were soluble but hydrolytically unstable. Whereas the copolymer from ATMS was insoluble, terpolymers containing less than 75 mol-% ATMS (relative to butene) were soluble in a variety of organic solvents. Moreover, they were stable against hydrolysis and had good film forming properties. Their electron beam sensitivity was 1. 5 mu C/cm**2 at 20 keV, and their contrast was approx. 2. The terpolymers have been used as a top imaging layer in a two-layer resist system to transfer half-micron features into a 1. 2 mu m-thick Novolac planarizing layer by oxygen reactive-ion etching.

Original language	English
Title of host publication	Technical Papers, Regional Technical Conference - Society of Plastics Engineers
Place of Publication	Brookfield Center, CT, USA
Publisher	Soc of Plastics Engineers Inc
Pages	157-165
Number of pages	9
State	Published - Dec 1 1985

ASJC Scopus subject areas

Engineering(all)

Cite this

APPLICATION OF POLY(ALKENYLSILANE SULFONE)S AS POSITIVE ELECTRON BEAM RESISTS FOR TWO-LAYER SYSTEMS. / Gozdz, Antoni S.; Craighead, Harold G.; Bowden, Murrae J.
Technical Papers, Regional Technical Conference - Society of Plastics Engineers. Brookfield Center, CT, USA: Soc of Plastics Engineers Inc, 1985. p. 157-165.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

@inproceedings{be82868b16754ed5bd04b0221ac52e95,

title = "APPLICATION OF POLY(ALKENYLSILANE SULFONE)S AS POSITIVE ELECTRON BEAM RESISTS FOR TWO-LAYER SYSTEMS.",

abstract = "Alternating copolymers of sulfur dioxide and vinyltrimethylsilane (VTMS) and terpolymers with allyltrimethylsilane (ATMS) and 1-butene have been synthesized by low-temperature, free radical-initiated polymerization. The copolymers with VTMS were soluble but hydrolytically unstable. Whereas the copolymer from ATMS was insoluble, terpolymers containing less than 75 mol-% ATMS (relative to butene) were soluble in a variety of organic solvents. Moreover, they were stable against hydrolysis and had good film forming properties. Their electron beam sensitivity was 1. 5 mu C/cm**2 at 20 keV, and their contrast was approx. 2. The terpolymers have been used as a top imaging layer in a two-layer resist system to transfer half-micron features into a 1. 2 mu m-thick Novolac planarizing layer by oxygen reactive-ion etching.",

author = "Gozdz, {Antoni S.} and Craighead, {Harold G.} and Bowden, {Murrae J.}",

year = "1985",

month = dec,

day = "1",

language = "English",

pages = "157--165",

booktitle = "Technical Papers, Regional Technical Conference - Society of Plastics Engineers",

publisher = "Soc of Plastics Engineers Inc",

}

TY - GEN

T1 - APPLICATION OF POLY(ALKENYLSILANE SULFONE)S AS POSITIVE ELECTRON BEAM RESISTS FOR TWO-LAYER SYSTEMS.

AU - Gozdz, Antoni S.

AU - Craighead, Harold G.

AU - Bowden, Murrae J.

PY - 1985/12/1

Y1 - 1985/12/1

N2 - Alternating copolymers of sulfur dioxide and vinyltrimethylsilane (VTMS) and terpolymers with allyltrimethylsilane (ATMS) and 1-butene have been synthesized by low-temperature, free radical-initiated polymerization. The copolymers with VTMS were soluble but hydrolytically unstable. Whereas the copolymer from ATMS was insoluble, terpolymers containing less than 75 mol-% ATMS (relative to butene) were soluble in a variety of organic solvents. Moreover, they were stable against hydrolysis and had good film forming properties. Their electron beam sensitivity was 1. 5 mu C/cm**2 at 20 keV, and their contrast was approx. 2. The terpolymers have been used as a top imaging layer in a two-layer resist system to transfer half-micron features into a 1. 2 mu m-thick Novolac planarizing layer by oxygen reactive-ion etching.

AB - Alternating copolymers of sulfur dioxide and vinyltrimethylsilane (VTMS) and terpolymers with allyltrimethylsilane (ATMS) and 1-butene have been synthesized by low-temperature, free radical-initiated polymerization. The copolymers with VTMS were soluble but hydrolytically unstable. Whereas the copolymer from ATMS was insoluble, terpolymers containing less than 75 mol-% ATMS (relative to butene) were soluble in a variety of organic solvents. Moreover, they were stable against hydrolysis and had good film forming properties. Their electron beam sensitivity was 1. 5 mu C/cm**2 at 20 keV, and their contrast was approx. 2. The terpolymers have been used as a top imaging layer in a two-layer resist system to transfer half-micron features into a 1. 2 mu m-thick Novolac planarizing layer by oxygen reactive-ion etching.

UR - http://www.scopus.com/inward/record.url?scp=0022323535&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022323535&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0022323535

SP - 157

EP - 165

BT - Technical Papers, Regional Technical Conference - Society of Plastics Engineers

PB - Soc of Plastics Engineers Inc

CY - Brookfield Center, CT, USA

ER -

APPLICATION OF POLY(ALKENYLSILANE SULFONE)S AS POSITIVE ELECTRON BEAM RESISTS FOR TWO-LAYER SYSTEMS.

Abstract

ASJC Scopus subject areas

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