Abstract
We have calculated the recombination rates of electrons and holes in a quantum dot ensemble. The calculation treats the various recombination mechanisms as localized events at the dot site and uses global population statistics, re-interpreted to provide integer occupancies of the ground and excited states of the dots. The results show that the localization means that unambiguous functional forms describing the recombination in terms of charge carrier density can no longer be determined. The evolution of the recombination rates with increasing injection is complex and the different radiative and non-radiative routes have a similar dependence. Experimentally this means that studies of the light output versus current can no longer be used to assess the dominant recombination process.
Original language | English (US) |
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Title of host publication | Physics and Simulation of Optoelectronic Devices XIV |
Volume | 6115 |
DOIs | |
State | Published - May 22 2006 |
Event | Physics and Simulation of Optoelectronic Devices XIV - San Jose, CA, United States Duration: Jan 22 2006 → Jan 26 2006 |
Other
Other | Physics and Simulation of Optoelectronic Devices XIV |
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Country/Territory | United States |
City | San Jose, CA |
Period | 1/22/06 → 1/26/06 |
Keywords
- Quantum dots
- Semiconductor lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics