Analysis of localized recombination in quantum dots

Huw D. Summers; Helen Pask; Peter Blood

doi:10.1117/12.661399

Analysis of localized recombination in quantum dots

Huw D. Summers, Helen Pask, Peter Blood

Houston Methodist

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have calculated the recombination rates of electrons and holes in a quantum dot ensemble. The calculation treats the various recombination mechanisms as localized events at the dot site and uses global population statistics, re-interpreted to provide integer occupancies of the ground and excited states of the dots. The results show that the localization means that unambiguous functional forms describing the recombination in terms of charge carrier density can no longer be determined. The evolution of the recombination rates with increasing injection is complex and the different radiative and non-radiative routes have a similar dependence. Experimentally this means that studies of the light output versus current can no longer be used to assess the dominant recombination process.

Original language	English (US)
Title of host publication	Physics and Simulation of Optoelectronic Devices XIV
DOIs	https://doi.org/10.1117/12.661399
State	Published - 2006
Event	Physics and Simulation of Optoelectronic Devices XIV - San Jose, CA, United States Duration: Jan 22 2006 → Jan 26 2006

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6115
ISSN (Print)	0277-786X

Other

Other	Physics and Simulation of Optoelectronic Devices XIV
Country/Territory	United States
City	San Jose, CA
Period	1/22/06 → 1/26/06

Keywords

Quantum dots
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

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10.1117/12.661399

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title = "Analysis of localized recombination in quantum dots",

abstract = "We have calculated the recombination rates of electrons and holes in a quantum dot ensemble. The calculation treats the various recombination mechanisms as localized events at the dot site and uses global population statistics, re-interpreted to provide integer occupancies of the ground and excited states of the dots. The results show that the localization means that unambiguous functional forms describing the recombination in terms of charge carrier density can no longer be determined. The evolution of the recombination rates with increasing injection is complex and the different radiative and non-radiative routes have a similar dependence. Experimentally this means that studies of the light output versus current can no longer be used to assess the dominant recombination process.",

keywords = "Quantum dots, Semiconductor lasers",

author = "Summers, {Huw D.} and Helen Pask and Peter Blood",

year = "2006",

doi = "10.1117/12.661399",

language = "English (US)",

isbn = "0819461571",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

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TY - GEN

T1 - Analysis of localized recombination in quantum dots

AU - Summers, Huw D.

AU - Pask, Helen

AU - Blood, Peter

PY - 2006

Y1 - 2006

N2 - We have calculated the recombination rates of electrons and holes in a quantum dot ensemble. The calculation treats the various recombination mechanisms as localized events at the dot site and uses global population statistics, re-interpreted to provide integer occupancies of the ground and excited states of the dots. The results show that the localization means that unambiguous functional forms describing the recombination in terms of charge carrier density can no longer be determined. The evolution of the recombination rates with increasing injection is complex and the different radiative and non-radiative routes have a similar dependence. Experimentally this means that studies of the light output versus current can no longer be used to assess the dominant recombination process.

AB - We have calculated the recombination rates of electrons and holes in a quantum dot ensemble. The calculation treats the various recombination mechanisms as localized events at the dot site and uses global population statistics, re-interpreted to provide integer occupancies of the ground and excited states of the dots. The results show that the localization means that unambiguous functional forms describing the recombination in terms of charge carrier density can no longer be determined. The evolution of the recombination rates with increasing injection is complex and the different radiative and non-radiative routes have a similar dependence. Experimentally this means that studies of the light output versus current can no longer be used to assess the dominant recombination process.

KW - Quantum dots

KW - Semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=33646557712&partnerID=8YFLogxK

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DO - 10.1117/12.661399

M3 - Conference contribution

AN - SCOPUS:33646557712

SN - 0819461571

SN - 9780819461575

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Physics and Simulation of Optoelectronic Devices XIV

T2 - Physics and Simulation of Optoelectronic Devices XIV

Y2 - 22 January 2006 through 26 January 2006

ER -

Analysis of localized recombination in quantum dots

Abstract

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Keywords

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