Analysis of localized recombination in quantum dots

Huw D. Summers, Helen Pask, Peter Blood

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We have calculated the recombination rates of electrons and holes in a quantum dot ensemble. The calculation treats the various recombination mechanisms as localized events at the dot site and uses global population statistics, re-interpreted to provide integer occupancies of the ground and excited states of the dots. The results show that the localization means that unambiguous functional forms describing the recombination in terms of charge carrier density can no longer be determined. The evolution of the recombination rates with increasing injection is complex and the different radiative and non-radiative routes have a similar dependence. Experimentally this means that studies of the light output versus current can no longer be used to assess the dominant recombination process.

Original languageEnglish (US)
Title of host publicationPhysics and Simulation of Optoelectronic Devices XIV
StatePublished - 2006
EventPhysics and Simulation of Optoelectronic Devices XIV - San Jose, CA, United States
Duration: Jan 22 2006Jan 26 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherPhysics and Simulation of Optoelectronic Devices XIV
Country/TerritoryUnited States
CitySan Jose, CA


  • Quantum dots
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics


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