TY - JOUR
T1 - Advacancy-induced step bunching on vicinal surfaces
AU - Misbah, C.
AU - Pierre-Louis, O.
AU - Pimpinelli, A.
PY - 1995
Y1 - 1995
N2 - Step bunching at the surface of a sublimating crystal Joule-heated by a dc electric current is investigated in the presence of both adatoms and surface vacancies (advacancies). We show that the inclusion of advacancies in the step flow model of Burton, Cabrera, and Frank is crucial in order to reproduce the high-temperature behavior of real Si(111) vicinal surfaces. This provides a complete qualitative picture of the morphologies reported by Latyshev et al. [Surf. Sci. 213, 157 (1989)], and strongly supports the hypothesis of electromigration. Agreement with experiments is obtained only assuming that the force exerted on adatoms and advacancies by the electric current is opposite to the latter.
AB - Step bunching at the surface of a sublimating crystal Joule-heated by a dc electric current is investigated in the presence of both adatoms and surface vacancies (advacancies). We show that the inclusion of advacancies in the step flow model of Burton, Cabrera, and Frank is crucial in order to reproduce the high-temperature behavior of real Si(111) vicinal surfaces. This provides a complete qualitative picture of the morphologies reported by Latyshev et al. [Surf. Sci. 213, 157 (1989)], and strongly supports the hypothesis of electromigration. Agreement with experiments is obtained only assuming that the force exerted on adatoms and advacancies by the electric current is opposite to the latter.
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U2 - 10.1103/PhysRevB.51.17283
DO - 10.1103/PhysRevB.51.17283
M3 - Article
AN - SCOPUS:0000992780
VL - 51
SP - 17283
EP - 17286
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 0163-1829
IS - 23
ER -