Actuation and internal friction of torsional nanomechanical silicon resonators

A. Olkhovets, S. Evoy, D. W. Carr, J. M. Parpia, H. G. Craighead

Research output: Contribution to journalConference article

25 Scopus citations

Abstract

The actuation and internal friction of torsional resonators were theoretically and experimentally analyzed. It was shown that torsional excitation could be provided from the asymmetry resulting from fabrication imperfections as small as 10-20 nm. A thin Al film was found to have a great degrading effect on Q. A broad peak of temperature dependent internal friction observed in the 160-190 K range was attributed to Debye relaxation.

Original languageEnglish (US)
Pages (from-to)3549-3551
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number6
DOIs
StatePublished - Nov 2000
Event44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Rancho Mirage, CA, USA
Duration: May 30 2000Jun 2 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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