Actuation and internal friction of torsional nanomechanical silicon resonators

A. Olkhovets; S. Evoy; D. W. Carr; J. M. Parpia; H. G. Craighead

doi:10.1116/1.1313571

Actuation and internal friction of torsional nanomechanical silicon resonators

A. Olkhovets, S. Evoy, D. W. Carr, J. M. Parpia, H. G. Craighead

Research output: Contribution to journal › Conference article

25 Scopus citations

Abstract

The actuation and internal friction of torsional resonators were theoretically and experimentally analyzed. It was shown that torsional excitation could be provided from the asymmetry resulting from fabrication imperfections as small as 10-20 nm. A thin Al film was found to have a great degrading effect on Q. A broad peak of temperature dependent internal friction observed in the 160-190 K range was attributed to Debye relaxation.

Original language	English (US)
Pages (from-to)	3549-3551
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	6
DOIs	https://doi.org/10.1116/1.1313571
State	Published - Nov 2000
Event	44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Rancho Mirage, CA, USA Duration: May 30 2000 → Jun 2 2000

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.1313571

Fingerprint Dive into the research topics of 'Actuation and internal friction of torsional nanomechanical silicon resonators'. Together they form a unique fingerprint.

Cite this

@article{a1ca33dfbdfc4280914ce562dc11b6ce,

title = "Actuation and internal friction of torsional nanomechanical silicon resonators",

abstract = "The actuation and internal friction of torsional resonators were theoretically and experimentally analyzed. It was shown that torsional excitation could be provided from the asymmetry resulting from fabrication imperfections as small as 10-20 nm. A thin Al film was found to have a great degrading effect on Q. A broad peak of temperature dependent internal friction observed in the 160-190 K range was attributed to Debye relaxation.",

author = "A. Olkhovets and S. Evoy and Carr, {D. W.} and Parpia, {J. M.} and Craighead, {H. G.}",

year = "2000",

month = nov,

doi = "10.1116/1.1313571",

language = "English (US)",

volume = "18",

pages = "3549--3551",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "6",

note = "44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication ; Conference date: 30-05-2000 Through 02-06-2000",

}

TY - JOUR

T1 - Actuation and internal friction of torsional nanomechanical silicon resonators

AU - Olkhovets, A.

AU - Evoy, S.

AU - Carr, D. W.

AU - Parpia, J. M.

AU - Craighead, H. G.

PY - 2000/11

Y1 - 2000/11

N2 - The actuation and internal friction of torsional resonators were theoretically and experimentally analyzed. It was shown that torsional excitation could be provided from the asymmetry resulting from fabrication imperfections as small as 10-20 nm. A thin Al film was found to have a great degrading effect on Q. A broad peak of temperature dependent internal friction observed in the 160-190 K range was attributed to Debye relaxation.

AB - The actuation and internal friction of torsional resonators were theoretically and experimentally analyzed. It was shown that torsional excitation could be provided from the asymmetry resulting from fabrication imperfections as small as 10-20 nm. A thin Al film was found to have a great degrading effect on Q. A broad peak of temperature dependent internal friction observed in the 160-190 K range was attributed to Debye relaxation.

UR - http://www.scopus.com/inward/record.url?scp=0034314868&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034314868&partnerID=8YFLogxK

U2 - 10.1116/1.1313571

DO - 10.1116/1.1313571

M3 - Conference article

AN - SCOPUS:0034314868

VL - 18

SP - 3549

EP - 3551

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 6

T2 - 44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication

Y2 - 30 May 2000 through 2 June 2000

ER -