A study of internal losses in CdZnSe/ZnSe multiple quantum well materials

J. F. Donegan, C. Jordan, P. Rees, F. Logue, J. F. Heffernan, J. Hegarty

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We have carried out measurements of the internal-losses in a multiple quantum well laser of Cd0.28Zn0.72Se/ZnSe. From the dependence of the slope efficiency as a function of cavity length the loss value obtained for the 40 A well width with 5 wells in the sample is 50 cm-1. This very large value is attributed mainly to absorption in the GaAs substrate on which the quantum wells were grown. This measurement shows the importance of using waveguide structures in order to obtain low threshold conditions in II-VI lasers.

Original languageEnglish (US)
Pages (from-to)653-656
Number of pages4
JournalJournal of Crystal Growth
Volume159
Issue number1-4
DOIs
StatePublished - Feb 1996

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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