650 nm lasers with narrow far-field divergence

P. M. Smowton; Huw Summers; G. Berry; P. Blood; C. C. Button

650 nm lasers with narrow far-field divergence

P. M. Smowton, Huw Summers, G. Berry, P. Blood, C. C. Button

Houston Methodist

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have reduced the measured vertical far-field divergence in a 650 nm laser from 35° to 21° (FWHM), without changing the threshold current, operating voltage or thermal impedance, by introducing additional optical mode expansion layers.

Original language	English (US)
Title of host publication	Conference Digest - IEEE International Semiconductor Laser Conference
Editors	Anon
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	141-142
Number of pages	2
State	Published - 1998
Event	Proceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC - Nara, Jpn Duration: Oct 4 1998 → Oct 8 1998

Other

Other	Proceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC
City	Nara, Jpn
Period	10/4/98 → 10/8/98

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Cite this

Smowton, PM, Summers, H, Berry, G, Blood, P & Button, CC 1998, 650 nm lasers with narrow far-field divergence. in Anon (ed.), Conference Digest - IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc., pp. 141-142, Proceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC, Nara, Jpn, 10/4/98.

@inproceedings{0370b0aeac984d8cafd0cfc5ded427ca,

title = "650 nm lasers with narrow far-field divergence",

abstract = "We have reduced the measured vertical far-field divergence in a 650 nm laser from 35° to 21° (FWHM), without changing the threshold current, operating voltage or thermal impedance, by introducing additional optical mode expansion layers.",

author = "Smowton, \{P. M.\} and Huw Summers and G. Berry and P. Blood and Button, \{C. C.\}",

year = "1998",

language = "English (US)",

pages = "141--142",

editor = "Anon",

booktitle = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "Proceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC ; Conference date: 04-10-1998 Through 08-10-1998",

}

TY - GEN

T1 - 650 nm lasers with narrow far-field divergence

AU - Smowton, P. M.

AU - Summers, Huw

AU - Berry, G.

AU - Blood, P.

AU - Button, C. C.

PY - 1998

Y1 - 1998

N2 - We have reduced the measured vertical far-field divergence in a 650 nm laser from 35° to 21° (FWHM), without changing the threshold current, operating voltage or thermal impedance, by introducing additional optical mode expansion layers.

AB - We have reduced the measured vertical far-field divergence in a 650 nm laser from 35° to 21° (FWHM), without changing the threshold current, operating voltage or thermal impedance, by introducing additional optical mode expansion layers.

UR - https://www.scopus.com/pages/publications/0032312675

UR - https://www.scopus.com/inward/citedby.url?scp=0032312675&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0032312675

SP - 141

EP - 142

BT - Conference Digest - IEEE International Semiconductor Laser Conference

A2 - Anon, null

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Proceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC

Y2 - 4 October 1998 through 8 October 1998

ER -

650 nm lasers with narrow far-field divergence

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this