650-nm lasers with narrow far-field divergence with integrated optical mode expansion layers

P. M. Smowton, G. M. Lewis, M. Yin, H. D. Summers, G. Berry, C. C. Button

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

By means of numerical simulation of the optical and electrical performance, we have designed 650-nm GaInP-AlGaInP quantum-well lasers with mode expansion layers which have a narrow vertical far-field divergence without sacrificing threshold current or threshold current temperature dependence. We have reduced the measured vertical far-field divergence in a 650-nm laser structure from 35° to 24° full-width at half-maximum without changing the threshold current, operating voltage, or threshold current temperature dependence. We have also calculated the tolerances in the thickness and composition necessary to realize this design in practice.

Original languageEnglish (US)
Pages (from-to)735-739
Number of pages5
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume5
Issue number3
DOIs
StatePublished - May 1999

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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