650 nm lasers with narrow far-field divergence

P. M. Smowton, Huw Summers, G. Berry, P. Blood, C. C. Button

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have reduced the measured vertical far-field divergence in a 650 nm laser from 35° to 21° (FWHM), without changing the threshold current, operating voltage or thermal impedance, by introducing additional optical mode expansion layers.

Original languageEnglish (US)
Title of host publicationConference Digest - IEEE International Semiconductor Laser Conference
Editors Anon
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages141-142
Number of pages2
StatePublished - 1998
EventProceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC - Nara, Jpn
Duration: Oct 4 1998Oct 8 1998

Other

OtherProceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC
CityNara, Jpn
Period10/4/9810/8/98

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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